Manufacturer: STMicroelectronics
Win Source Part Number: 1102760-STB120N4LF6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: STB120N4LF6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 4300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): IPB039N04LGATMA1; IPB039N04LGXT; IPB039N04L G; IPB80N04S4L04XT;
Introduction Date: December 14, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
MOSFET N-CH 40V 80A D2PAK
N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)
MOSFET, N CH, 40V, 80A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Product Range:-RoHS Compliant: Yes
MOSFET N-CH 40V 80A D2PAK
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1102760-STB120N4LF6 | STB120N4LF6 | 497-11096-6-ND | 39T7097 | STB120N4LF6 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB120N4LF6 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N Ch, 40V, 80A, To-263; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 40 volts | 40 volts | |||
| PD | 110000 milliwatts | 110000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
