STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB120N4F6 STB120N4F6

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102759-STB120N4F6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STB120N4F6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 3850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): BUK765R2-40B; SQM50N04-4m0L_GE3 ; BUK764R0-40E; BUK664R6-40C; Introduction Date: February 09, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102759-STB120N4F6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STB120N4F6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 3850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): BUK765R2-40B; SQM50N04-4m0L_GE3 ; BUK764R0-40E; BUK664R6-40C; Introduction Date: February 09, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB120N4F6 - 1102759-STB120N4F6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB120N4F6
1102759-STB120N4F6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB120N4F6 1102759-STB120N4F6
Manufacturer: STMicroelectronics Win Source Part Number: 1102759-STB120N4F6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STB120N4F6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 3850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): BUK765R2-40B; SQM50N04-4m0L_GE3 ; BUK764R0-40E; BUK664R6-40C; Introduction Date: February 09, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1102759-STB120N4F6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: STB120N4F6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 3850pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): BUK765R2-40B; SQM50N04-4m0L_GE3 ; BUK764R0-40E; BUK664R6-40C;
Introduction Date: February 09, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2030
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
SMD 40V 80A MOSFET Transistor
278-STB120N4F6
SMD 40V 80A MOSFET Transistor 278-STB120N4F6
N-CH MOSFET, 40V, 80A, 4mR, D2PAK, Surface Mount Product overview: STB120N4F6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 40V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 40V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB120N4F6 can be used for catalog matching and distributor lookup.

N-CH MOSFET, 40V, 80A, 4mR, D2PAK, Surface Mount Product overview: STB120N4F6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 40V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 40V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB120N4F6 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - STB120N4F6 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB120N4F6
Single FETs, MOSFETs STB120N4F6
MOSFET N-CH 40V 80A D2PAK

MOSFET N-CH 40V 80A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-10768-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10768-1-ND
Single FETs, MOSFETs 497-10768-1-ND
N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-10768-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10768-2-ND
Single FETs, MOSFETs 497-10768-2-ND
N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-10768-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10768-6-ND
Single FETs, MOSFETs 497-10768-6-ND
N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE

MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB120N4F6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB120N4F6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB120N4F6
MOSFET N-CH 40V 80A D2PAK

MOSFET N-CH 40V 80A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1102759-STB120N4F6 278-STB120N4F6 STB120N4F6 497-10768-1-ND STB120N4F6 STB120N4F6
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB120N4F6 SMD 40V 80A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 40 volts 40 volts
PD 110000 milliwatts 110000 milliwatts 110000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Surface Mount
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