STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB120N4F6 STB120N4F6

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102759-STB120N4F6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STB120N4F6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 3850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): BUK765R2-40B; SQM50N04-4m0L_GE3 ; BUK764R0-40E; BUK664R6-40C; Introduction Date: February 09, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB120N4F6 - 1102759-STB120N4F6 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - STB120N4F6 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-10768-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-10768-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-10768-6-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB120N4F6 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102759-STB120N4F6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STB120N4F6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 3850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): BUK765R2-40B; SQM50N04-4m0L_GE3 ; BUK764R0-40E; BUK664R6-40C; Introduction Date: February 09, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB120N4F6 - 1102759-STB120N4F6 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB120N4F6
1102759-STB120N4F6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB120N4F6 1102759-STB120N4F6
Manufacturer: STMicroelectronics Win Source Part Number: 1102759-STB120N4F6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STB120N4F6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 3850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): BUK765R2-40B; SQM50N04-4m0L_GE3 ; BUK764R0-40E; BUK664R6-40C; Introduction Date: February 09, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1102759-STB120N4F6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: STB120N4F6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 3850pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): BUK765R2-40B; SQM50N04-4m0L_GE3 ; BUK764R0-40E; BUK664R6-40C;
Introduction Date: February 09, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2030
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - STB120N4F6 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB120N4F6
Single FETs, MOSFETs STB120N4F6
MOSFET N-CH 40V 80A D2PAK

MOSFET N-CH 40V 80A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-10768-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10768-1-ND
Single FETs, MOSFETs 497-10768-1-ND
N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-10768-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10768-2-ND
Single FETs, MOSFETs 497-10768-2-ND
N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-10768-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10768-6-ND
Single FETs, MOSFETs 497-10768-6-ND
N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STB120N4F6
MOSFET STB120N4F6
MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE

MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB120N4F6 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB120N4F6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB120N4F6
MOSFET N-CH 40V 80A D2PAK

MOSFET N-CH 40V 80A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1102759-STB120N4F6 STB120N4F6 497-10768-1-ND STB120N4F6 STB120N4F6
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB120N4F6 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 40 volts 40 volts
PD 110000 milliwatts 110000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Surface Mount
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