STMicroelectronics, Inc. Single FETs, MOSFETs STB11NM60N-1

Description
N-Channel 600V 10A (Tc) 90W (Tc) Through Hole I2PAK
Request a Quote Datasheet
Description
N-Channel 600V 10A (Tc) 90W (Tc) Through Hole I2PAK
Request a Quote Datasheet

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Single FETs, MOSFETs - STB11NM60N-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STB11NM60N-1-ND
Single FETs, MOSFETs STB11NM60N-1-ND
N-Channel 600V 10A (Tc) 90W (Tc) Through Hole I2PAK

N-Channel 600V 10A (Tc) 90W (Tc) Through Hole I2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB11NM60N-1 - 066272-STB11NM60N-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB11NM60N-1
066272-STB11NM60N-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB11NM60N-1 066272-STB11NM60N-1
Manufacturer: STMicroelectronics Win Source Part Number: 066272-STB11NM60N-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 850pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 450 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: STMicroelectronics
Win Source Part Number: 066272-STB11NM60N-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 850pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 450 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB11NM60N-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB11NM60N-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB11NM60N-1
MOSFET N-CH 600V 10A I2PAK

MOSFET N-CH 600V 10A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STB11NM60N-1-ND 066272-STB11NM60N-1 STB11NM60N-1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB11NM60N-1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; I2PAK TO-262-3 Long Leads, I2PAK, TO-262AA
V(BR)DSS 600 volts
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