STMicroelectronics, Inc. 600V 11A MOSFET Transistor STB11NM60-1

600V N-CH MOSFET, 11A, 450mR, I2PAK Power Transistor Product overview: STB11NM60-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB11NM60-1 can be used for catalog matching and distributor lookup.

N-Channel 650V 11A (Tc) 160W (Tc) Through Hole I2PAK

Manufacturer: STMicroelectronics
Win Source Part Number: 066270-STB11NM60-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 1000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 450 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): FCI11N60; STB11NM60FD-1; STB11NM60-1; IPI60R380C6;
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance