STMicroelectronics, Inc. Single FETs, MOSFETs STB10NK60Z-1

Description
N-Channel 600V 10A (Tc) 115W (Tc) Through Hole I2PAK
Request a Quote Datasheet
Description
N-Channel 600V 10A (Tc) 115W (Tc) Through Hole I2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STB10NK60Z-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STB10NK60Z-1-ND
Single FETs, MOSFETs STB10NK60Z-1-ND
N-Channel 600V 10A (Tc) 115W (Tc) Through Hole I2PAK

N-Channel 600V 10A (Tc) 115W (Tc) Through Hole I2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB10NK60Z-1 - 037056-STB10NK60Z-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB10NK60Z-1
037056-STB10NK60Z-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB10NK60Z-1 037056-STB10NK60Z-1
Manufacturer: STMicroelectronics Win Source Part Number: 037056-STB10NK60Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 115W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 1370pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 4.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 037056-STB10NK60Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 115W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 1370pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 4.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
600V 10A 0.75 Ohm MOSFET Transistor
278-STB10NK60Z-1
600V 10A 0.75 Ohm MOSFET Transistor 278-STB10NK60Z-1
600V 10A N-CH MOSFET, 0.75 Ohm, TO-262, SuperMESH Product overview: STB10NK60Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10A, 0.75 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10A, 0.75 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB10NK60Z-1 can be used for catalog matching and distributor lookup.

600V 10A N-CH MOSFET, 0.75 Ohm, TO-262, SuperMESH Product overview: STB10NK60Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10A, 0.75 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10A, 0.75 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB10NK60Z-1 can be used for catalog matching and distributor lookup.

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH

MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB10NK60Z-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB10NK60Z-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB10NK60Z-1
MOSFET N-CH 600V 10A I2PAK

MOSFET N-CH 600V 10A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STB10NK60Z-1-ND 037056-STB10NK60Z-1 278-STB10NK60Z-1 STB10NK60Z-1 STB10NK60Z-1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB10NK60Z-1 600V 10A 0.75 Ohm MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; I2PAK TO-262-3 Long Leads, I2PAK, TO-262AA
V(BR)DSS 600 volts
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