Manufacturer: STMicroelectronics
Win Source Part Number: 1021327-STB10N60M2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 13.5nC @ 10V
Max Input Capacitance: 400pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
N-Channel 600V 7.5A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 7.5A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 7.5A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 600V 7.5A D2PAK
MOSFET N-Ch 600V 0.55 Ohm typ. 7.5A
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1021327-STB10N60M2 | 497-STB10N60M2DKR-ND | STB10N60M2 | STB10N60M2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB10N60M2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | |||
| PD | 85000 milliwatts |
