MOSFET N-CH 60V 100A D2PAK
N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a D2PAK package Product overview: STB100N6F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, 4.7 mOhm, 100 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, 4.7 mOhm, 100 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB100N6F7 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 811885-STB100N6F7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 125W (Tc)
Popularity: Low
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 5.6mOhm at 50A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 30nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1980pF at 25V
Current - Continuous Drain (Id) at 25°C: 100A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: STB100N
Maximum Vgs: ±20V
MOSFET N-Ch 60V100A STripFET F7 D2PAK
MOSFET N-Ch 60V100A STripFET F7 D2PAK
MOSFET N-Ch 60V100A STripFET F7 D2PAK
N-Channel 60V 100A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 60V 100A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 60V 100A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a D2PAK package
MOSFET N-CH 60V 100A D2PAK
MOSFET, N-CH, 60V, 100A, 125W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STB100N6F7 | 278-STB100N6F7 | 811885-STB100N6F7 | 9064668P | 9064668 | 497-15894-2-ND | STB100N6F7 | STB100N6F7 | 07AH6942 |
| Product Name | Single FETs, MOSFETs | N-Channel 60 V 4.7 mOhm 100 A MOSFET Transistor | FETs - Single - STB100N6F7 | MOSFETs | MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 100A, 125W, To-263; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 60 volts | ||||||||
| IDSS | 100000 milliamps | 100000 milliamps | |||||||
| PD | 125000 milliwatts | 125000 milliwatts |
