STMicroelectronics, Inc. Bipolar RF Transistors SD1275-01

Description
RF Transistor NPN 16V 8A 70W Surface Mount M113
  • Bipolar RF Transistors - 497-5456-ND - DigiKey
    DigiKey
  • TRANSISTORS - RF Transistors (BJT) - SD1275-01 - 042550-SD1275-01 - Win Source Electronics
    Win Source Electronics
  • Trans GP BJT NPN 16V 8A 4-Pin Case M-113 Tray - 761-SD1275-01 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SD1275-01 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
RF Transistor NPN 16V 8A 70W Surface Mount M113
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - 497-5456-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
497-5456-ND
Bipolar RF Transistors 497-5456-ND
RF Transistor NPN 16V 8A 70W Surface Mount M113

RF Transistor NPN 16V 8A 70W Surface Mount M113

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - SD1275-01 - 042550-SD1275-01 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - SD1275-01
042550-SD1275-01
TRANSISTORS - RF Transistors (BJT) - SD1275-01 042550-SD1275-01
Manufacturer: STMicroelectronics Win Source Part Number: 042550-SD1275-01 Packaging: Bulk Mounting: SMD (SMT) Gain: 9dB Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: M113 Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 16V Typical Gain (hFE) (Min): 20 @ 250mA, 5V Maximum Power Dissipation: 70W Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 042550-SD1275-01
Packaging: Bulk
Mounting: SMD (SMT)
Gain: 9dB
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: M113
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 16V
Typical Gain (hFE) (Min): 20 @ 250mA, 5V
Maximum Power Dissipation: 70W
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Trans GP BJT NPN 16V 8A 4-Pin Case M-113 Tray - 761-SD1275-01 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Trans GP BJT NPN 16V 8A 4-Pin Case M-113 Tray
761-SD1275-01
Trans GP BJT NPN 16V 8A 4-Pin Case M-113 Tray 761-SD1275-01
Trans GP BJT NPN 16V 8A 4-Pin Case M-113 Tray

Trans GP BJT NPN 16V 8A 4-Pin Case M-113 Tray

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SD1275-01 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
SD1275-01
Discrete Semiconductor Products - Transistors - Bipolar (BJT) SD1275-01
RF TRANS NPN 16V M113

RF TRANS NPN 16V M113

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 497-5456-ND 042550-SD1275-01 761-SD1275-01 SD1275-01
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - SD1275-01 Trans GP BJT NPN 16V 8A 4-Pin Case M-113 Tray Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN; NPN
Package Type M113 SOT3; M113
Packing Method Bulk; Bulk Box
Number of units in IC 1
IC(max) 8000 milliamps
Unlock Full Specs
to access all available technical data