STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SCTWA90N65G2V-4

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1324369-SCTWA90N65G2 V-4 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 119A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 565W (Tc) Supplier Device Package: HiP247™ Long Leads Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V Vgs (Max): +22V, -10V Temperature Range - Operating: -55°C ~ 200°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 85 MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 497-SCTWA90N65G2V-4 Base Product Number: SCTWA90 RoHS Status: ROHS3 Compliant
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324369-SCTWA90N65G2V-4 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-SCTWA90N65G2V-4-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SCTWA90N65G2V-4 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCTWA90N65G2V-4 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, Sic, 650V, 119A, Hip247 Rohs Compliant Stmicroelectronics - 50AJ6011 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1324369-SCTWA90N65G2 V-4 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 119A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 565W (Tc) Supplier Device Package: HiP247™ Long Leads Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V Vgs (Max): +22V, -10V Temperature Range - Operating: -55°C ~ 200°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 85 MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 497-SCTWA90N65G2V-4 Base Product Number: SCTWA90 RoHS Status: ROHS3 Compliant
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324369-SCTWA90N65G2V-4 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324369-SCTWA90N65G2V-4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324369-SCTWA90N65G2V-4
Manufacturer: STMicroelectronics Win Source Part Number: 1324369-SCTWA90N65G2 V-4 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 119A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 565W (Tc) Supplier Device Package: HiP247™ Long Leads Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V Vgs (Max): +22V, -10V Temperature Range - Operating: -55°C ~ 200°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 85 MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 497-SCTWA90N65G2V-4 Base Product Number: SCTWA90 RoHS Status: ROHS3 Compliant

Manufacturer: STMicroelectronics
Win Source Part Number: 1324369-SCTWA90N65G2V-4
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 565W (Tc)
Supplier Device Package: HiP247™ Long Leads
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 200°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 85
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-SCTWA90N65G2V-4
Base Product Number: SCTWA90
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - 497-SCTWA90N65G2V-4-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-SCTWA90N65G2V-4-ND
Single FETs, MOSFETs 497-SCTWA90N65G2V-4-ND
N-Channel 650V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads

N-Channel 650V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads

Buy Now Datasheet
Single FETs, MOSFETs - SCTWA90N65G2V-4 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SCTWA90N65G2V-4
Single FETs, MOSFETs SCTWA90N65G2V-4
TRANS SJT N-CH 650V 119A HIP247

TRANS SJT N-CH 650V 119A HIP247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCTWA90N65G2V-4 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCTWA90N65G2V-4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCTWA90N65G2V-4
TRANS SJT N-CH 650V 119A HIP247

TRANS SJT N-CH 650V 119A HIP247

Supplier's Site
Mosfet, Sic, 650V, 119A, Hip247 Rohs Compliant Stmicroelectronics - 50AJ6011 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Sic, 650V, 119A, Hip247 Rohs Compliant Stmicroelectronics
50AJ6011
Mosfet, Sic, 650V, 119A, Hip247 Rohs Compliant Stmicroelectronics 50AJ6011
MOSFET, SIC, 650V, 119A, HIP247 ROHS COMPLIANT: YES

MOSFET, SIC, 650V, 119A, HIP247 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1324369-SCTWA90N65G2V-4 497-SCTWA90N65G2V-4-ND SCTWA90N65G2V-4 SCTWA90N65G2V-4 50AJ6011
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Sic, 650V, 119A, Hip247 Rohs Compliant Stmicroelectronics
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3
Transistor Technology / Material Silicon Carbide SiCFET (Silicon Carbide)
V(BR)DSS 650 volts
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