TRANS SJT N-CH 650V 119A HIP247
Manufacturer: STMicroelectronics
Win Source Part Number: 1324369-SCTWA90N65G2
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 565W (Tc)
Supplier Device Package: HiP247™ Long Leads
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 200°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 85
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-SCTWA90N65G2V-4
Base Product Number: SCTWA90
RoHS Status: ROHS3 Compliant
N-Channel 650V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads
TRANS SJT N-CH 650V 119A HIP247
MOSFET, SIC, 650V, 119A, HIP247 ROHS COMPLIANT: YES
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SCTWA90N65G2V-4 | 1324369-SCTWA90N65G2V-4 | 497-SCTWA90N65G2V-4-ND | SCTWA90N65G2V-4 | 50AJ6011 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Sic, 650V, 119A, Hip247 Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | |||
| V(BR)DSS | 650 volts | ||||
| IDSS | 119000 milliamps |
