Silicon carbide Power MOSFET 1200 V, 21
Silicon carbide Power MOSFET 1200 V, 21
Silicon carbide Power MOSFET 1200 V, 21
DISCRETE Product overview: SCTWA70N120G2V-4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTWA70N120G2V-4
DISCRETE
SIC MOSFET, N-CH, 1.2KV, 91A, HIP247 ROHS COMPLIANT: YES
| ODG (Origin Data Global) | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SCTWA70N120G2V-4 | 2330474 | 278-SCTWA70N120G2V-4 | 497-SCTWA70N120G2V-4-ND | SCTWA70N120G2V-4 | 74AJ1813 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Sic Mosfet, N-Ch, 1.2Kv, 91A, Hip247 Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 1200 volts | 1200 volts | ||||
| IDSS | 91000 milliamps | |||||
| PD | 547000 milliwatts | 547 milliwatts |
