N-Channel 1200V 65A (Tc) 318W (Tc) Through Hole HiP247™
Alternative Parts (Cross-Reference): Cross
Manufacturer: STMicroelectronics
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package Product overview: SCTWA50N120 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 65 A, 59 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, 65 A, 59 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTWA50N120 can be used for catalog matching and distributor lookup.
SICFET N-CH 1200V 65A HIP247
SICFET N-CH 1200V 65A HIP247
MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-SCTWA50N120-ND | 278-SCTWA50N120 | SCTWA50N120 | SCTWA50N120 | SCTWA50N120 | |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs | 1200 V 65 A 59 mOhm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | ||||
| Package Type | TO-247; TO-247-3 | SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | ||
| Packing Method | Tube; Tube |
