STMicroelectronics, Inc. Single FETs, MOSFETs SCTWA35N65G2V

N-Channel 650V 45A (Tc) 208W (Tc) Through Hole TO-247 Long Leads

Manufacturer: STMicroelectronics
Win Source Part Number: 1324092-SCTWA35N65G2V
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 1mA
Power Dissipation (Max): 208W (Tc)
Supplier Device Package: TO-247 Long Leads
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 400 V
Vgs (Max): +20V, -5V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 85
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-SCTWA35N65G2V
Base Product Number: SCTWA35
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
RoHS Status: ROHS3 Compliant

Silicon carbide Power MOSFET 650 V, 45 A, 75 mOhm (typ. TJ = 175 C) in an HiP247 long leads package Product overview: SCTWA35N65G2V from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 45 A, 75 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 45 A, 75 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTWA35N65G2V can be used for catalog matching and distributor lookup.

TRANS SJT N-CH 650V 45A TO247