This N-Channel MOSFET from STMicroelectronics features a maximum drain-source voltage of 650V and a continuous drain current rating of 119A at a case temperature of 25¬8C. It has a low on-resistance of 18 mOc at a gate-source voltage of 18V and is capable of handling a total power dissipation of 565W. The device operates effectively at high junction temperatures, with a maximum rating of 200¬8C. It is designed for applications such as switching, renewable energy power supplies, and high-frequency DC-DC converters. The MOSFET also includes a robust intrinsic body diode and exhibits low gate charge and input capacitances, contributing to its efficient switching performance. The product is RoHS compliant, making it suitable for environmentally conscious designs.
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package Product overview: SCTW90N65G2V from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 119 A, 18 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 119 A, 18 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTW90N65G2V can be used for catalog matching and distributor lookup.
SICFET N-CH 650V 90A HIP247
Win Source Part Number: 1091929-SCTW90N65G2V
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 390W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: HiP247™
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-18351
Base Product Number: SCTW90
Drive Voltage (Max Rds On, Min Rds On): 18V
N-Channel 650V 90A (Tc) 390W (Tc) Through Hole HiP247™
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
MOSFET, N-CH, 650V, 119A, 200DEG C, 565W ROHS COMPLIANT: YES
SICFET N-CH 650V 90A HIP247
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SCTW90N65G2V | SCTW90N65G2V | 1091929-SCTW90N65G2V | 497-18351-ND | SCTW90N65G2V | 69AH2147 | SCTW90N65G2V |
| Product Name | 650 V 119 A 18 mOhm MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 119A, 200Deg C, 565W Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| TJ | -55 C (-67 F) | -55 to 200 C (-67 to 392 F) | |||||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | |||||
| V(BR)DSS | 650 volts |
