Silicon carbide Power MOSFET 1200 V, 91 A, 21 mOhm (typ. TJ = 25 C) in an HiP247 package Product overview: SCTW70N120G2V from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 91 A, 21 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, 91 A, 21 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTW70N120G2V can be used for catalog matching and distributor lookup.
N-Channel 1200V 91A (Tc) 547W (Tc) Through Hole HiP247™
Manufacturer: STMicroelectronics
Win Source Part Number: 1324128-SCTW70N120G2
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 4.9V @ 1mA
Power Dissipation (Max): 547W (Tc)
Supplier Device Package: HiP247™
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 200°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 83
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-SCTW70N120G2V
Base Product Number: SCTW70
Drive Voltage (Max Rds On, Min Rds On): 18V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
TRANS SJT N-CH 1200V 91A HIP247
TRANS SJT N-CH 1200V 91A HIP247
SIC MOSFET, SINGLE, N-CH, 1.2KV, 91A ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SCTW70N120G2V | 497-SCTW70N120G2V-ND | 1324128-SCTW70N120G2V | SCTW70N120G2V | SCTW70N120G2V | 89AH1287 |
| Product Name | 1200 V 91 A 21 mOhm MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Sic Mosfet, Single, N-Ch, 1.2Kv, 91A Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | ||||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3 | |
| V(BR)DSS | 1200 volts |
