STMicroelectronics, Inc. Single FETs, MOSFETs SCTW40N120G2VAG

N-Channel 1200V 33A (Tc) 290W (Tc) Through Hole HiP247™

Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an HiP247 package Product overview: SCTW40N120G2VAG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 1200 V, 33 A, 75 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 1200 V, 33 A, 75 mOhm, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTW40N120G2VAG can be used for catalog matching and distributor lookup.

SICFET N-CH 1200V 33A HIP247

Win Source Part Number: 1278142-SCTW40N120G2VAG
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 290W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: HiP247™
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-SCTW40N120G2VAG
Base Product Number: SCTW40
Drive Voltage (Max Rds On, Min Rds On): 18V