Win Source Part Number: 1091924-SCTW35N65G2V
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 240W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: HiP247™
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-SCTW35N65G2V
Base Product Number: SCTW35
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package Product overview: SCTW35N65G2V from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 45 A, 55 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 45 A, 55 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTW35N65G2V can be used for catalog matching and distributor lookup.
N-Channel 650V 45A (Tc) 240W (Tc) Through Hole HiP247™
SCTW35N65G2V, Sic MOSFET 650V 45A 55
SCTW35N65G2V, Sic MOSFET 650V 45A 55
SCTW35N65G2V, Sic MOSFET 650V 45A 55
SICFET N-CH 650V 45A HIP247
MOSFET, N-CH, 650V, 45A, 200DEG C, 240W ROHS COMPLIANT: YES
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1091924-SCTW35N65G2V | 278-SCTW35N65G2V | 497-SCTW35N65G2V-ND | 2010859 | 2010860P | SCTW35N65G2V | 69AH2144 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 650 V 45 A 55 mOhm MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 45A, 200Deg C, 240W Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| Package Type | SOT3 | TO-247; TO-247-3 | Hip247 | Hip-247 | TO-247; TO-247-3 | TO-3 | |
| Transistor Technology / Material | Silicon Carbide | Sic | |||||
| Transistor Grade / Operating Range | Automotive |
