STMicroelectronics, Inc. MOSFETs SCTW35N65G2V

Description
SCTW35N65G2V, Sic MOSFET 650V 45A 55
Request a Quote Datasheet
Description
SCTW35N65G2V, Sic MOSFET 650V 45A 55
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 2010859 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2010859
MOSFETs 2010859
SCTW35N65G2V, Sic MOSFET 650V 45A 55

SCTW35N65G2V, Sic MOSFET 650V 45A 55

Supplier's Site
MOSFETs - 2010860P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2010860P
MOSFETs 2010860P
SCTW35N65G2V, Sic MOSFET 650V 45A 55

SCTW35N65G2V, Sic MOSFET 650V 45A 55

Supplier's Site
MOSFETs - 2010860 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2010860
MOSFETs 2010860
SCTW35N65G2V, Sic MOSFET 650V 45A 55

SCTW35N65G2V, Sic MOSFET 650V 45A 55

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1091924-SCTW35N65G2V - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1091924-SCTW35N65G2V
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1091924-SCTW35N65G2V
Win Source Part Number: 1091924-SCTW35N65G2V Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101 Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 240W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: HiP247™ Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V Vgs (Max): +22V, -10V Temperature Range - Operating: -55°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 85 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-SCTW35N65G2V Base Product Number: SCTW35 Drive Voltage (Max Rds On, Min Rds On): 18V, 20V

Win Source Part Number: 1091924-SCTW35N65G2V
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 240W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: HiP247™
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-SCTW35N65G2V
Base Product Number: SCTW35
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V

Buy Now Datasheet
Single FETs, MOSFETs - 497-SCTW35N65G2V-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-SCTW35N65G2V-ND
Single FETs, MOSFETs 497-SCTW35N65G2V-ND
N-Channel 650V 45A (Tc) 240W (Tc) Through Hole HiP247™

N-Channel 650V 45A (Tc) 240W (Tc) Through Hole HiP247™

Buy Now Datasheet
Mosfet, N-Ch, 650V, 45A, 200Deg C, 240W Rohs Compliant Stmicroelectronics - 69AH2144 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 45A, 200Deg C, 240W Rohs Compliant Stmicroelectronics
69AH2144
Mosfet, N-Ch, 650V, 45A, 200Deg C, 240W Rohs Compliant Stmicroelectronics 69AH2144
MOSFET, N-CH, 650V, 45A, 200DEG C, 240W ROHS COMPLIANT: YES

MOSFET, N-CH, 650V, 45A, 200DEG C, 240W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCTW35N65G2V - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCTW35N65G2V
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCTW35N65G2V
SICFET N-CH 650V 45A HIP247

SICFET N-CH 650V 45A HIP247

Supplier's Site

Technical Specifications

  RS Components, Ltd. RS Components, Ltd. Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2010859 2010860P 1091924-SCTW35N65G2V 497-SCTW35N65G2V-ND 69AH2144 SCTW35N65G2V
Product Name MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Mosfet, N-Ch, 650V, 45A, 200Deg C, 240W Rohs Compliant Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
Transistor Technology / Material Sic Silicon Carbide
MOSFET Operating Mode Enhancement
Package Type Hip247 Hip-247 SOT3 TO-247; TO-247-3 TO-3 TO-247; TO-247-3
Unlock Full Specs
to access all available technical data