STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SCTW100N65G2AG

Description
Win Source Part Number: 1278139-SCTW100N65G2 AG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101 Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5V @ 5mA Power Dissipation (Max): 420W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: HiP247™ Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V Vgs (Max): +22V, -10V Temperature Range - Operating: -55°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-SCTW100N65G2AG Base Product Number: SCTW100 Drive Voltage (Max Rds On, Min Rds On): 18V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278139-SCTW100N65G2AG - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-SCTW100N65G2AG-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SCTW100N65G2AG - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCTW100N65G2AG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 650V, 100A, 200Deg C, 420W Rohs Compliant Stmicroelectronics - 69AH2143 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Win Source Part Number: 1278139-SCTW100N65G2 AG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101 Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5V @ 5mA Power Dissipation (Max): 420W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: HiP247™ Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V Vgs (Max): +22V, -10V Temperature Range - Operating: -55°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-SCTW100N65G2AG Base Product Number: SCTW100 Drive Voltage (Max Rds On, Min Rds On): 18V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278139-SCTW100N65G2AG - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278139-SCTW100N65G2AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278139-SCTW100N65G2AG
Win Source Part Number: 1278139-SCTW100N65G2 AG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101 Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5V @ 5mA Power Dissipation (Max): 420W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: HiP247™ Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V Vgs (Max): +22V, -10V Temperature Range - Operating: -55°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-SCTW100N65G2AG Base Product Number: SCTW100 Drive Voltage (Max Rds On, Min Rds On): 18V

Win Source Part Number: 1278139-SCTW100N65G2AG
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 420W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: HiP247™
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-SCTW100N65G2AG
Base Product Number: SCTW100
Drive Voltage (Max Rds On, Min Rds On): 18V

Buy Now Datasheet
Single FETs, MOSFETs - 497-SCTW100N65G2AG-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-SCTW100N65G2AG-ND
Single FETs, MOSFETs 497-SCTW100N65G2AG-ND
N-Channel 650V 100A (Tc) 420W (Tc) Through Hole HiP247™

N-Channel 650V 100A (Tc) 420W (Tc) Through Hole HiP247™

Buy Now Datasheet
Single FETs, MOSFETs - SCTW100N65G2AG - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SCTW100N65G2AG
Single FETs, MOSFETs SCTW100N65G2AG
SICFET N-CH 650V 100A HIP247

SICFET N-CH 650V 100A HIP247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCTW100N65G2AG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCTW100N65G2AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCTW100N65G2AG
SICFET N-CH 650V 100A HIP247

SICFET N-CH 650V 100A HIP247

Supplier's Site
Mosfet, N-Ch, 650V, 100A, 200Deg C, 420W Rohs Compliant Stmicroelectronics - 69AH2143 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 100A, 200Deg C, 420W Rohs Compliant Stmicroelectronics
69AH2143
Mosfet, N-Ch, 650V, 100A, 200Deg C, 420W Rohs Compliant Stmicroelectronics 69AH2143
MOSFET, N-CH, 650V, 100A, 200DEG C, 420W ROHS COMPLIANT: YES

MOSFET, N-CH, 650V, 100A, 200DEG C, 420W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1278139-SCTW100N65G2AG 497-SCTW100N65G2AG-ND SCTW100N65G2AG SCTW100N65G2AG 69AH2143
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 650V, 100A, 200Deg C, 420W Rohs Compliant Stmicroelectronics
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3
Transistor Technology / Material Silicon Carbide SiCFET (Silicon Carbide)
Transistor Grade / Operating Range Automotive
V(BR)DSS 650 volts
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