STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SCTW100N65G2AG

Description
Win Source Part Number: 1278139-SCTW100N65G2 AG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101 Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5V @ 5mA Power Dissipation (Max): 420W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: HiP247™ Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V Vgs (Max): +22V, -10V Temperature Range - Operating: -55°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-SCTW100N65G2AG Base Product Number: SCTW100 Drive Voltage (Max Rds On, Min Rds On): 18V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278139-SCTW100N65G2AG - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SCTW100N65G2AG - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-SCTW100N65G2AG-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 650V, 100A, 200Deg C, 420W Rohs Compliant Stmicroelectronics - 69AH2143 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCTW100N65G2AG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Win Source Part Number: 1278139-SCTW100N65G2 AG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101 Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5V @ 5mA Power Dissipation (Max): 420W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: HiP247™ Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V Vgs (Max): +22V, -10V Temperature Range - Operating: -55°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-SCTW100N65G2AG Base Product Number: SCTW100 Drive Voltage (Max Rds On, Min Rds On): 18V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278139-SCTW100N65G2AG - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278139-SCTW100N65G2AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278139-SCTW100N65G2AG
Win Source Part Number: 1278139-SCTW100N65G2 AG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101 Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5V @ 5mA Power Dissipation (Max): 420W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: HiP247™ Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V Vgs (Max): +22V, -10V Temperature Range - Operating: -55°C ~ 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-SCTW100N65G2AG Base Product Number: SCTW100 Drive Voltage (Max Rds On, Min Rds On): 18V

Win Source Part Number: 1278139-SCTW100N65G2AG
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 420W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: HiP247™
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-SCTW100N65G2AG
Base Product Number: SCTW100
Drive Voltage (Max Rds On, Min Rds On): 18V

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
Automotive 650 V 100 A 20 mOhm MOSFET Transistor
278-SCTW100N65G2AG
Automotive 650 V 100 A 20 mOhm MOSFET Transistor 278-SCTW100N65G2AG
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package Product overview: SCTW100N65G2AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 650 V, 100 A, 20 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 650 V, 100 A, 20 mOhm, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTW100N65G2AG can be used for catalog matching and distributor lookup.

Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package Product overview: SCTW100N65G2AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 650 V, 100 A, 20 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 650 V, 100 A, 20 mOhm, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTW100N65G2AG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SCTW100N65G2AG - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SCTW100N65G2AG
Single FETs, MOSFETs SCTW100N65G2AG
SICFET N-CH 650V 100A HIP247

SICFET N-CH 650V 100A HIP247

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-SCTW100N65G2AG-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-SCTW100N65G2AG-ND
Single FETs, MOSFETs 497-SCTW100N65G2AG-ND
N-Channel 650V 100A (Tc) 420W (Tc) Through Hole HiP247™

N-Channel 650V 100A (Tc) 420W (Tc) Through Hole HiP247™

Buy Now Datasheet
Mosfet, N-Ch, 650V, 100A, 200Deg C, 420W Rohs Compliant Stmicroelectronics - 69AH2143 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 100A, 200Deg C, 420W Rohs Compliant Stmicroelectronics
69AH2143
Mosfet, N-Ch, 650V, 100A, 200Deg C, 420W Rohs Compliant Stmicroelectronics 69AH2143
MOSFET, N-CH, 650V, 100A, 200DEG C, 420W ROHS COMPLIANT: YES

MOSFET, N-CH, 650V, 100A, 200DEG C, 420W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCTW100N65G2AG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCTW100N65G2AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCTW100N65G2AG
SICFET N-CH 650V 100A HIP247

SICFET N-CH 650V 100A HIP247

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1278139-SCTW100N65G2AG 278-SCTW100N65G2AG SCTW100N65G2AG 497-SCTW100N65G2AG-ND 69AH2143 SCTW100N65G2AG
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Automotive 650 V 100 A 20 mOhm MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 650V, 100A, 200Deg C, 420W Rohs Compliant Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3 TO-247; TO-247-3
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 650 volts
IDSS 100000 milliamps
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