SILICON CARBIDE POWER MOSFET 650
N-Channel 650V 40A (Tc) 935W (Tc) Surface Mount PowerFlat™ (8x8) HV
N-Channel 650V 40A (Tc) 935W (Tc) Surface Mount PowerFlat™ (8x8) HV
N-Channel 650V 40A (Tc) 935W (Tc) Surface Mount PowerFlat™ (8x8) HV
SIC MOSFET, N-CH, 650V, 40A, POWERFLAT ROHS COMPLIANT: YES
SILICON CARBIDE POWER MOSFET 650
| ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SCTL90N65G2V | 497-SCTL90N65G2VTR-ND | 40AJ8413 | SCTL90N65G2V |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Sic Mosfet, N-Ch, 650V, 40A, Powerflat Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | ||
| V(BR)DSS | 650 volts | |||
| IDSS | 40000 milliamps |
