N-Channel 650V 90A (Tc) 330W (Tc) Surface Mount H2PAK-7
N-Channel 650V 90A (Tc) 330W (Tc) Surface Mount H2PAK-7
N-Channel 650V 90A (Tc) 330W (Tc) Surface Mount H2PAK-7
Win Source Part Number: 1278181-SCTH90N65G2V
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 330W (Tc)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package: H2PAK-7
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-18352-6,497-1835
Base Product Number: SCTH90
Drive Voltage (Max Rds On, Min Rds On): 18V
MOSFET, N-CH, 650V, 116A, 175DEG C, 484W ROHS COMPLIANT: YES
SICFET N-CH 650V 90A H2PAK-7
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
| DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-18352-6-ND | 1278181-SCTH90N65G2V-7 | 69AH2142 | SCTH90N65G2V-7 | SCTH90N65G2V-7 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 650V, 116A, 175Deg C, 484W Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel |
