N-Channel 650V 90A (Tc) 330W (Tc) Surface Mount H2PAK-7
N-Channel 650V 90A (Tc) 330W (Tc) Surface Mount H2PAK-7
N-Channel 650V 90A (Tc) 330W (Tc) Surface Mount H2PAK-7
Win Source Part Number: 1278181-SCTH90N65G2V
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 330W (Tc)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package: H2PAK-7
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-18352-6,497-1835
Base Product Number: SCTH90
Drive Voltage (Max Rds On, Min Rds On): 18V
Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package Product overview: SCTH90N65G2V-7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 116 A, 18 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 116 A, 18 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTH90N65G2V-7 can be used for catalog matching and distributor lookup.
SICFET N-CH 650V 90A H2PAK-7
MOSFET, N-CH, 650V, 116A, 175DEG C, 484W ROHS COMPLIANT: YES
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-18352-6-ND | 1278181-SCTH90N65G2V-7 | 278-SCTH90N65G2V-7 | SCTH90N65G2V-7 | 69AH2142 | SCTH90N65G2V-7 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 650 V 116 A 18 mOhm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 116A, 175Deg C, 484W Rohs Compliant Stmicroelectronics | MOSFET |
| Polarity | N-Channel | N-Channel |
