N-Channel 650V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
N-Channel 650V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
N-Channel 650V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package Product overview: SCTH35N65G2V-7AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 650 V, 45 A, 55 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 650 V, 45 A, 55 mOhm, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTH35N65G2V-7AG
Manufacturer: STMicroelectronics
Win Source Part Number: 1325359-SCTH35N65G2V
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 1,000
Mounting: Surface Mount
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 1mA
Power Dissipation (Max): 208W (Tc)
Supplier Device Package: H2PAK-7
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: -1138-SCTH35N65G2V-7
Base Product Number: SCTH35
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
RoHS Status: ROHS3 Compliant
SICFET N-CH 650V 45A H2PAK-7
SICFET N-CH 650V 45A H2PAK-7
MOSFET, SIC, 650V, 45A, H2PAK ROHS COMPLIANT: YES
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-SCTH35N65G2V-7AGTR-ND | 278-SCTH35N65G2V-7AG | 1325359-SCTH35N65G2V-7AG | SCTH35N65G2V-7AG | SCTH35N65G2V-7AG | 50AJ6008 |
| Product Name | Single FETs, MOSFETs | Automotive 650 V 45 A 55 mOhm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Sic, 650V, 45A, H2Pak Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | ||||
| Package Type | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263; SOT3; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-3 | |
| Transistor Grade / Operating Range | Automotive | |||||
| V(BR)DSS | 650 volts |
