Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package Product overview: SCTH35N65G2V-7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 45 A, 55 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 45 A, 55 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTH35N65G2V-7 can be used for catalog matching and distributor lookup.
N-Channel 650V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
N-Channel 650V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
N-Channel 650V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
Win Source Part Number: 1091928-SCTH35N65G2V
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 1mA
Power Dissipation (Max): 208W (Tc)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package: H2PAK-7
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SCTH35N65G2V-7SCTH35
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-SCTH35N65G2V-7DK
Base Product Number: SCTH35
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
SICFET N-CH 650V 45A H2PAK-7
MOSFET, N-CH, 650V, 45A, 175DEG C, 208W ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SCTH35N65G2V-7 | 497-SCTH35N65G2V-7CT-ND | 1091928-SCTH35N65G2V-7 | SCTH35N65G2V-7 | 69AH2140 |
| Product Name | 650 V 45 A 55 mOhm MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 45A, 175Deg C, 208W Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel | N-Channel |