Win Source Part Number: 1091928-SCTH35N65G2V
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 1mA
Power Dissipation (Max): 208W (Tc)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package: H2PAK-7
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SCTH35N65G2V-7SCTH35
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-SCTH35N65G2V-7DK
Base Product Number: SCTH35
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
N-Channel 650V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
N-Channel 650V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
N-Channel 650V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
SICFET N-CH 650V 45A H2PAK-7
MOSFET, N-CH, 650V, 45A, 175DEG C, 208W ROHS COMPLIANT: YES
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1091928-SCTH35N65G2V-7 | 497-SCTH35N65G2V-7CT-ND | SCTH35N65G2V-7 | 69AH2140 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 45A, 175Deg C, 208W Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel | N-Channel |
