SICFET N-CH 650V 95A H2PAK-7
Win Source Part Number: 1278146-SCTH100N65G2
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 360W (Tc)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package: H2PAK-7
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-SCTH100N65G2-7AG
Base Product Number: SCTH100
Drive Voltage (Max Rds On, Min Rds On): 18V
N-Channel 650V 95A (Tc) 360W (Tc) Surface Mount H2PAK-7
N-Channel 650V 95A (Tc) 360W (Tc) Surface Mount H2PAK-7
N-Channel 650V 95A (Tc) 360W (Tc) Surface Mount H2PAK-7
MOSFET, N-CH, 650V, 95A, 175DEG C, 360W ROHS COMPLIANT: YES
SICFET N-CH 650V 95A H2PAK-7
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SCTH100N65G2-7AG | 1278146-SCTH100N65G2-7AG | 497-SCTH100N65G2-7AGCT-ND | 69AH2139 | SCTH100N65G2-7AG |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 95A, 175Deg C, 360W Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | |||
| V(BR)DSS | 650 volts | ||||
| IDSS | 95000 milliamps | ||||
| PD | 360000 milliwatts |
