N-Channel 650V 95A (Tc) 360W (Tc) Surface Mount H2PAK-7
N-Channel 650V 95A (Tc) 360W (Tc) Surface Mount H2PAK-7
N-Channel 650V 95A (Tc) 360W (Tc) Surface Mount H2PAK-7
SICFET N-CH 650V 95A H2PAK-7
Automotive-grade silicon carbide Power MOSFET 650 V, 95 A, 20 mOhm (typ. TJ = 25 C) in an H2PAK-7 package Product overview: SCTH100N65G2-7AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 650 V, 95 A, 20 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 650 V, 95 A, 20 mOhm, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTH100N65G2-7AG
Win Source Part Number: 1278146-SCTH100N65G2
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 360W (Tc)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package: H2PAK-7
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-SCTH100N65G2-7AG
Base Product Number: SCTH100
Drive Voltage (Max Rds On, Min Rds On): 18V
SICFET N-CH 650V 95A H2PAK-7
MOSFET, N-CH, 650V, 95A, 175DEG C, 360W ROHS COMPLIANT: YES
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-SCTH100N65G2-7AGCT-ND | SCTH100N65G2-7AG | 278-SCTH100N65G2-7AG | 1278146-SCTH100N65G2-7AG | SCTH100N65G2-7AG | 69AH2139 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Automotive 650 V 95 A 20 mOhm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 95A, 175Deg C, 360W Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | ||||
| Package Type | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SOT3 | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-3 | |
| Transistor Grade / Operating Range | Automotive | |||||
| V(BR)DSS | 650 volts |
