STMicroelectronics, Inc. Single FETs, MOSFETs SCT30N120

Description
SICFET N-CH 1200V 40A HIP247
Request a Quote Datasheet
Description
SICFET N-CH 1200V 40A HIP247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SCT30N120 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SCT30N120
Single FETs, MOSFETs SCT30N120
SICFET N-CH 1200V 40A HIP247

SICFET N-CH 1200V 40A HIP247

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT30N120 - 763124-SCT30N120 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT30N120
763124-SCT30N120
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT30N120 763124-SCT30N120
Manufacturer: STMicroelectronics Win Source Part Number: 763124-SCT30N120 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 200°C (TJ) Package: TO-247-3 Technology: SiCFET (Silicon Carbide) Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Family Name: SCT30N120 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 20V Manufacturer Package: HiP247 Channel Type Type: N Drain Source Voltage: 1200V Vgs(th) (Maximum) @ Id: 2.6V @ 1mA (Typ) Gate Charge (Qg) (Maximum) @ Vgs: 105nC @ 20V Input Capacitance (Ciss) (Maximum) @ Vds: 1700pF @ 400V Vgs (Maximum): +25V, -10V Power Dissipation (Maximum): 270W (Tc) Rds On (Maximum) @ Id, Vgs: 100 mOhm @ 20A, 20V Alternative Parts (Cross-Reference): APT40SM120B; LSIC1MO120E0080SCT31 05KLHRC11; ; Introduction Date: May 10, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2032 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 763124-SCT30N120
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 200°C (TJ)
Package: TO-247-3
Technology: SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Family Name: SCT30N120
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 20V
Manufacturer Package: HiP247
Channel Type Type: N
Drain Source Voltage: 1200V
Vgs(th) (Maximum) @ Id: 2.6V @ 1mA (Typ)
Gate Charge (Qg) (Maximum) @ Vgs: 105nC @ 20V
Input Capacitance (Ciss) (Maximum) @ Vds: 1700pF @ 400V
Vgs (Maximum): +25V, -10V
Power Dissipation (Maximum): 270W (Tc)
Rds On (Maximum) @ Id, Vgs: 100 mOhm @ 20A, 20V
Alternative Parts (Cross-Reference): APT40SM120B; LSIC1MO120E0080SCT3105KLHRC11; ;
Introduction Date: May 10, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2032
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFETs - 9074741P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9074741P
MOSFETs 9074741P
MOSFET N-Ch 45A 1200V SiC HiP247

MOSFET N-Ch 45A 1200V SiC HiP247

Supplier's Site
MOSFETs - 9074741 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9074741
MOSFETs 9074741
MOSFET N-Ch 45A 1200V SiC HiP247

MOSFET N-Ch 45A 1200V SiC HiP247

Supplier's Site
MOSFETs - 1688966 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1688966
MOSFETs 1688966
MOSFET N-Ch 45A 1200V SiC HiP247

MOSFET N-Ch 45A 1200V SiC HiP247

Supplier's Site
Singapore
1.2kV 40A MOSFET Transistor
278-SCT30N120
1.2kV 40A MOSFET Transistor 278-SCT30N120
SiC Power MOSFET 1.2kV 40A 80mR N-CH TO-247 Product overview: SCT30N120 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.2kV, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.2kV, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT30N120 can be used for catalog matching and distributor lookup.

SiC Power MOSFET 1.2kV 40A 80mR N-CH TO-247 Product overview: SCT30N120 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.2kV, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.2kV, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT30N120 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-14960-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14960-ND
Single FETs, MOSFETs 497-14960-ND
N-Channel 1200V 40A (Tc) 270W (Tc) Through Hole HiP247™

N-Channel 1200V 40A (Tc) 270W (Tc) Through Hole HiP247™

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 1200V silicon carbide MOSFET

MOSFET 1200V silicon carbide MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCT30N120 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCT30N120
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCT30N120
SICFET N-CH 1200V 40A HIP247

SICFET N-CH 1200V 40A HIP247

Supplier's Site
Mosfet, N Ch, 1.2Kv, 40A, Hip247-3; Mosfet Module Configuration Stmicroelectronics - 94X2608 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 1.2Kv, 40A, Hip247-3; Mosfet Module Configuration Stmicroelectronics
94X2608
Mosfet, N Ch, 1.2Kv, 40A, Hip247-3; Mosfet Module Configuration Stmicroelectronics 94X2608
MOSFET, N CH, 1.2KV, 40A, HIP247-3; MOSFET Module Configuration:Single ; Continuous Drain Current Id:40A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes

MOSFET, N CH, 1.2KV, 40A, HIP247-3; MOSFET Module Configuration:Single; Continuous Drain Current Id:40A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SCT30N120 763124-SCT30N120 9074741P 9074741 278-SCT30N120 497-14960-ND SCT30N120 SCT30N120 94X2608
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT30N120 MOSFETs MOSFETs 1.2kV 40A MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Ch, 1.2Kv, 40A, Hip247-3; Mosfet Module Configuration Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 1200 volts
IDSS 40000 milliamps 40000 milliamps
PD 270000 milliwatts 270000 milliwatts 270000 milliwatts
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