SiC Power MOSFET 1.2kV 40A 80mR N-CH TO-247 Product overview: SCT30N120 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.2kV, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.2kV, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT30N120 can be used for catalog matching and distributor lookup.
SICFET N-CH 1200V 40A HIP247
Manufacturer: STMicroelectronics
Win Source Part Number: 763124-SCT30N120
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 200°C (TJ)
Package: TO-247-3
Technology: SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Family Name: SCT30N120
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 20V
Manufacturer Package: HiP247
Channel Type Type: N
Drain Source Voltage: 1200V
Vgs(th) (Maximum) @ Id: 2.6V @ 1mA (Typ)
Gate Charge (Qg) (Maximum) @ Vgs: 105nC @ 20V
Input Capacitance (Ciss) (Maximum) @ Vds: 1700pF @ 400V
Vgs (Maximum): +25V, -10V
Power Dissipation (Maximum): 270W (Tc)
Rds On (Maximum) @ Id, Vgs: 100 mOhm @ 20A, 20V
Alternative Parts (Cross-Reference): APT40SM120B; LSIC1MO120E0080SCT31
Introduction Date: May 10, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2032
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
N-Channel 1200V 40A (Tc) 270W (Tc) Through Hole HiP247™
MOSFET 1200V silicon carbide MOSFET
MOSFET, N CH, 1.2KV, 40A, HIP247-3; MOSFET Module Configuration:Single
SICFET N-CH 1200V 40A HIP247
| RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 9074741P | 9074741 | 278-SCT30N120 | SCT30N120 | 763124-SCT30N120 | 497-14960-ND | SCT30N120 | 94X2608 | SCT30N120 |
| Product Name | MOSFETs | MOSFETs | 1.2kV 40A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT30N120 | Single FETs, MOSFETs | MOSFET | Mosfet, N Ch, 1.2Kv, 40A, Hip247-3; Mosfet Module Configuration Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | Hip-247 | Hip247 | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | TO-3 | TO-247; TO-247-3 | ||
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | ||||||||
| Number of units in IC | 1 | ||||||||
| PD | 270000 milliwatts | 270000 milliwatts | 270000 milliwatts |
