STMicroelectronics, Inc. Single FETs, MOSFETs SCT20N120

Description
SICFET N-CH 1200V 20A HIP247
  • Single FETs, MOSFETs - SCT20N120 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-15170-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 1.2Kv, 20A, Hip247; Mosfet Module Configuration Stmicroelectronics - 45AC7496 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCT20N120 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
SICFET N-CH 1200V 20A HIP247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SCT20N120 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SCT20N120
Single FETs, MOSFETs SCT20N120
SICFET N-CH 1200V 20A HIP247

SICFET N-CH 1200V 20A HIP247

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-15170-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15170-ND
Single FETs, MOSFETs 497-15170-ND
N-Channel 1200V 20A (Tc) 175W (Tc) Through Hole HiP247™

N-Channel 1200V 20A (Tc) 175W (Tc) Through Hole HiP247™

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
1200 V 20 A 189 mOhm MOSFET Transistor
278-SCT20N120
1200 V 20 A 189 mOhm MOSFET Transistor 278-SCT20N120
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package Product overview: SCT20N120 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 20 A, 189 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, 20 A, 189 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT20N120 can be used for catalog matching and distributor lookup.

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package Product overview: SCT20N120 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 20 A, 189 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, 20 A, 189 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT20N120 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 1.2Kv, 20A, Hip247; Mosfet Module Configuration Stmicroelectronics - 45AC7496 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 20A, Hip247; Mosfet Module Configuration Stmicroelectronics
45AC7496
Mosfet, N-Ch, 1.2Kv, 20A, Hip247; Mosfet Module Configuration Stmicroelectronics 45AC7496
MOSFET, N-CH, 1.2KV, 20A, HIP247; MOSFET Module Configuration:Single ; Continuous Drain Current Id:20A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3.5V; MSL:- RoHS Compliant: Yes

MOSFET, N-CH, 1.2KV, 20A, HIP247; MOSFET Module Configuration:Single; Continuous Drain Current Id:20A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3.5V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SCT20N120
MOSFET SCT20N120
MOSFET 1200V silicon carbide MOSFET

MOSFET 1200V silicon carbide MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCT20N120 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCT20N120
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCT20N120
SICFET N-CH 1200V 20A HIP247

SICFET N-CH 1200V 20A HIP247

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SCT20N120 497-15170-ND 278-SCT20N120 45AC7496 SCT20N120 SCT20N120
Product Name Single FETs, MOSFETs Single FETs, MOSFETs 1200 V 20 A 189 mOhm MOSFET Transistor Mosfet, N-Ch, 1.2Kv, 20A, Hip247; Mosfet Module Configuration Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 1200 volts
IDSS 20000 milliamps 20000 milliamps
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