N-Channel 1200V 12A (Tc) 150W (Tc) Through Hole HiP247™
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package Product overview: SCT10N120 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 12 A, 520 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, 12 A, 520 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT10N120 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1325334-SCT10N120
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 100
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: HiP247™
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V
Vgs (Max): +25V, -10V
Temperature Range - Operating: -55°C ~ 200°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 78
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-16597-5
Base Product Number: SCT10
Drive Voltage (Max Rds On, Min Rds On): 20V
RoHS Status: ROHS3 Compliant
MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
MOSFET, N-CH, 1.2KV, 12A, 150W, HIP247; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
SICFET N-CH 1200V 12A HIP247
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-16597-5-ND | 278-SCT10N120 | 1325334-SCT10N120 | SCT10N120 | 07AH6931 | SCT10N120 |
| Product Name | Single FETs, MOSFETs | 1200 V 12 A 520 mOhm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Mosfet, N-Ch, 1.2Kv, 12A, 150W, Hip247; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||||
| Transistor Technology / Material | Silicon Carbide | |||||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | TO-3 | TO-247; TO-247-3 |
