STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SCT1000N170

Win Source Part Number: 1091914-SCT1000N170
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 600
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 96W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: HiP247™
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: SCT1000
Drive Voltage (Max Rds On, Min Rds On): 20V

Silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package Product overview: SCT1000N170 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700 V, 7 A, 1.0 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700 V, 7 A, 1.0 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT1000N170 can be used for catalog matching and distributor lookup.

N-Channel 1700V 7A (Tc) 96W (Tc) Through Hole HiP247™