RF FET Transistor N-CH 25V 2A 1GHz SOT-89 Product overview: PD84002 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 2A, 1GHz, SOT-89. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 2A, 1GHz, SOT-89, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PD84002 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1087142-PD84002
Packaging: Reel - TR
Voltage Rating: 25V
Current Rating: 2A
Frequency: 870MHz
Current - Test: 100mA
Gain: 15dB
Transistor Polarity: LDMOS
Voltage - Test: 7.5V
Power - Output: 2W
Family Name: PD84002
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-89
Introduction Date: December 05, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
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RF MOSFET LDMOS 7.5V SOT89
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF MOSFET Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 285-PD84002 | PD84002 | 1087142-PD84002 | PD84002 | PD84002 |
| Product Name | 25V 2A 1GHz SOT-89 MOSFET Transistor | RF FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PD84002 | RF MOSFET Transistors | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | LDMOS | |||
| PD | 6000 milliwatts | ||||
| TJ | -65 C (-85 F) | ||||
| Transistor Technology / Material | LDMOS |
