RF Mosfet LDMOS 28V 100mA 945MHz 14.3dB 60W 10-PowerSO
FET RF 65V 945MHZ PWRSO10
Win Source Part Number: 1084426-PD57060-E
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 50
Voltage - Rated: 65 V
Frequency: 945MHz
Current - Test: 100 mA
Gain: 14.3dB
Transistor Type: LDMOS
Voltage - Test: 28 V
Power - Output: 60W
Package / Case: PowerSO-10 Exposed Bottom Pad
Supplier Device Package: 10-PowerSO
Alternative Parts (Cross-Reference): PD57060S-E; PD57045-E; FDD24AN06LA0-F085; FDD5810-F085; SD57045-01; IRFR9024PBFPD57060E;
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 3 (168 Hours)
Current Rating (Amps): 7A
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: PD57060E,497-5309-5
Base Product Number: PD57060
RF MOSFET LDMOS 28V POWERSO10
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | RF MOSFET Transistors | RF MOSFET Transistors | RF Transistors |
| Product Number | 497-5309-5-ND | PD57060-E | 1084426-PD57060-E | PD57060-E |
| Product Name | RF FETs, MOSFETs | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | PowerSO-10 Exposed Bottom Pad | PowerSO-10 Exposed Bottom Pad | SOT3 | 10-PowerSO |
| Transistor Technology / Material | LDMOS | |||
| Power Gain | 14.3 dB | 14.3 dB |
