STMicroelectronics, Inc. RF FETs, MOSFETs PD57006TR-E

Description
RF Mosfet LDMOS 28V 70mA 945MHz 15dB 6W PowerSO-10RF (Formed Lead)
Request a Quote Datasheet
Description
RF Mosfet LDMOS 28V 70mA 945MHz 15dB 6W PowerSO-10RF (Formed Lead)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF FETs, MOSFETs - 497-6475-2-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
497-6475-2-ND
RF FETs, MOSFETs 497-6475-2-ND
RF Mosfet LDMOS 28V 70mA 945MHz 15dB 6W PowerSO-10RF (Formed Lead)

RF Mosfet LDMOS 28V 70mA 945MHz 15dB 6W PowerSO-10RF (Formed Lead)

Buy Now Datasheet
Singapore, Singapore
6W 28V 1GHz MOSFET Transistor
285-PD57006TR-E
6W 28V 1GHz MOSFET Transistor 285-PD57006TR-E
6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package Product overview: PD57006TR-E from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6W, 28V, 1GHz. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 6W, 28V, 1GHz, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PD57006TR-E can be used for catalog matching and distributor lookup.

6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package Product overview: PD57006TR-E from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6W, 28V, 1GHz. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 6W, 28V, 1GHz, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PD57006TR-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PD57006TR-E - 888809-PD57006TR-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PD57006TR-E
888809-PD57006TR-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PD57006TR-E 888809-PD57006TR-E
Manufacturer: STMicroelectronics Win Source Part Number: 888809-PD57006TR-E Features: RF Mosfet LDMOS 28 V 70 mA 945MHz 15dB 6W PowerSO-10RF (Formed Lead) Package: Reel - TR Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Part Status: Obsolete Family Name: PD57006 Categories: Discrete Semiconductor Products Case / Package: PowerSO-10RF (Formed Lead) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Limited Quantity per package: 600 MSL Level: 3 (168 Hours) HTSUS: 8541.29.0095 Other Part Number: 497-6475-2, 497-6475-1, -497-6475-1, -497-6475-2, PD57006TRE, 497-6475-6, PD57006TR-E-ND

Manufacturer: STMicroelectronics
Win Source Part Number: 888809-PD57006TR-E
Features: RF Mosfet LDMOS 28 V 70 mA 945MHz 15dB 6W PowerSO-10RF (Formed Lead)
Package: Reel - TR
Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Part Status: Obsolete
Family Name: PD57006
Categories: Discrete Semiconductor Products
Case / Package: PowerSO-10RF (Formed Lead)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Limited
Quantity per package: 600
MSL Level: 3 (168 Hours)
HTSUS: 8541.29.0095
Other Part Number: 497-6475-2, 497-6475-1, -497-6475-1, -497-6475-2, PD57006TRE, 497-6475-6, PD57006TR-E-ND

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PD57006TR-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD57006TR-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PD57006TR-E
RF MOSFET LDMOS 28V POWERSO-10RF

RF MOSFET LDMOS 28V POWERSO-10RF

Supplier's Site
RF FETs, MOSFETs - PD57006TR-E - ODG (Origin Data Global)
Shenzhen, China
RF FETs, MOSFETs
PD57006TR-E
RF FETs, MOSFETs PD57006TR-E
TRANSISTOR RF POWERSO-10

TRANSISTOR RF POWERSO-10

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors RF MOSFET Transistors
Product Number 497-6475-2-ND 285-PD57006TR-E 888809-PD57006TR-E PD57006TR-E PD57006TR-E
Product Name RF FETs, MOSFETs 6W 28V 1GHz MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - PD57006TR-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs RF FETs, MOSFETs
Package Type PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) SOT3; PowerSO-10RF (Formed Lead) PowerSO-10RF (Formed Lead) PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Polarity N-Channel
PD 20000 milliwatts
TJ -65 C (-85 F)
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