TRANS RF N-CH FET POWERSO-10RF
Manufacturer: STMicroelectronics
Win Source Part Number: 1236530-PD20010-E
Packaging: Tube
Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating: 5A
Frequency: 2GHz
Current - Test: 150mA
Gain: 11dB
Transistor Type: LDMOS
Voltage - Test: 13.6V
Power - Output: 10W
Family Name: PD20010
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.st.com
Manufacturer Package: PowerSO-10RF (Formed Lead)
Voltage Rating DC: 40V
Alternative Parts (Cross-Reference): D2201UK; PD20010TR-E;
Introduction Date: March 24, 2009
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
RF Mosfet LDMOS 13.6V 150mA 2GHz 11dB 10W PowerSO-10RF (Formed Lead)
10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package Product overview: PD20010-E from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10W, 13.6V, 2GHz. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10W, 13.6V, 2GHz, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PD20010-E can be used for catalog matching and distributor lookup.
RF MOSFET LDMOS 13.6V PWRSO-10RF
RF MOSFET Transistors POWER R.F.
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | RF MOSFET Transistors | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PD20010-E | 1236530-PD20010-E | 497-13044-5-ND | 285-PD20010-E | PD20010-E | PD20010-E |
| Product Name | RF FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PD20010-E | RF FETs, MOSFETs | 10W 13.6V 2GHz MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | RF MOSFET Transistors |
| Transistor Technology / Material | LDMOS | |||||
| Power Gain | 11 dB | 11 dB | ||||
| Operating Frequency | 2000 MHz | 2000 MHz | ||||
| Package Type | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | SOT3 | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | PowerSO-10RF (Formed Lead) | ||
| Packing Method | Tube; Tube | Tube; Tube |
