RF Mosfet LDMOS 13.6V 150mA 2GHz 11dB 10W PowerSO-10RF (Formed Lead)
10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package Product overview: PD20010-E from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10W, 13.6V, 2GHz. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10W, 13.6V, 2GHz, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PD20010-E can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1236530-PD20010-E
Packaging: Tube
Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating: 5A
Frequency: 2GHz
Current - Test: 150mA
Gain: 11dB
Transistor Type: LDMOS
Voltage - Test: 13.6V
Power - Output: 10W
Family Name: PD20010
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.st.com
Manufacturer Package: PowerSO-10RF (Formed Lead)
Voltage Rating DC: 40V
Alternative Parts (Cross-Reference): D2201UK; PD20010TR-E;
Introduction Date: March 24, 2009
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
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| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF MOSFET Transistors |
| Product Number | 497-13044-5-ND | 285-PD20010-E | 1236530-PD20010-E | PD20010-E | PD20010-E | PD20010-E |
| Product Name | RF FETs, MOSFETs | 10W 13.6V 2GHz MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PD20010-E | RF MOSFET Transistors | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | RF FETs, MOSFETs |
| Package Type | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | SOT3 | PowerSO-10RF (Formed Lead) | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | ||
| Polarity | N-Channel | |||||
| PD | 59000 milliwatts | |||||
| TJ | -65 C (-85 F) | |||||
| Packing Method | Tube; Tube | Tube; Tube |