STMicroelectronics, Inc. RF FETs, MOSFETs PD20010-E

Description
RF Mosfet LDMOS 13.6V 150mA 2GHz 11dB 10W PowerSO-10RF (Formed Lead)
Request a Quote Datasheet
Description
RF Mosfet LDMOS 13.6V 150mA 2GHz 11dB 10W PowerSO-10RF (Formed Lead)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF FETs, MOSFETs - 497-13044-5-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
497-13044-5-ND
RF FETs, MOSFETs 497-13044-5-ND
RF Mosfet LDMOS 13.6V 150mA 2GHz 11dB 10W PowerSO-10RF (Formed Lead)

RF Mosfet LDMOS 13.6V 150mA 2GHz 11dB 10W PowerSO-10RF (Formed Lead)

Buy Now Datasheet
Singapore
10W 13.6V 2GHz MOSFET Transistor
285-PD20010-E
10W 13.6V 2GHz MOSFET Transistor 285-PD20010-E
10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package Product overview: PD20010-E from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10W, 13.6V, 2GHz. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10W, 13.6V, 2GHz, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PD20010-E can be used for catalog matching and distributor lookup.

10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package Product overview: PD20010-E from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10W, 13.6V, 2GHz. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10W, 13.6V, 2GHz, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PD20010-E can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PD20010-E - 1236530-PD20010-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PD20010-E
1236530-PD20010-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PD20010-E 1236530-PD20010-E
Manufacturer: STMicroelectronics Win Source Part Number: 1236530-PD20010-E Packaging: Tube Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Current Rating: 5A Frequency: 2GHz Current - Test: 150mA Gain: 11dB Transistor Type: LDMOS Voltage - Test: 13.6V Power - Output: 10W Family Name: PD20010 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.st.com Manufacturer Package: PowerSO-10RF (Formed Lead) Voltage Rating DC: 40V Alternative Parts (Cross-Reference): D2201UK; PD20010TR-E; Introduction Date: March 24, 2009 ECCN: EAR99 Country of Origin: Morocco Estimated EOL Date: 2024 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1236530-PD20010-E
Packaging: Tube
Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating: 5A
Frequency: 2GHz
Current - Test: 150mA
Gain: 11dB
Transistor Type: LDMOS
Voltage - Test: 13.6V
Power - Output: 10W
Family Name: PD20010
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.st.com
Manufacturer Package: PowerSO-10RF (Formed Lead)
Voltage Rating DC: 40V
Alternative Parts (Cross-Reference): D2201UK; PD20010TR-E;
Introduction Date: March 24, 2009
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
RF MOSFET Transistors
PD20010-E
RF MOSFET Transistors PD20010-E
RF MOSFET Transistors POWER R.F.

RF MOSFET Transistors POWER R.F.

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PD20010-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD20010-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PD20010-E
RF MOSFET LDMOS 13.6V PWRSO-10RF

RF MOSFET LDMOS 13.6V PWRSO-10RF

Supplier's Site
RF FETs, MOSFETs - PD20010-E - ODG (Origin Data Global)
Shenzhen, China
RF FETs, MOSFETs
PD20010-E
RF FETs, MOSFETs PD20010-E
TRANS RF N-CH FET POWERSO-10RF

TRANS RF N-CH FET POWERSO-10RF

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF MOSFET Transistors
Product Number 497-13044-5-ND 285-PD20010-E 1236530-PD20010-E PD20010-E PD20010-E PD20010-E
Product Name RF FETs, MOSFETs 10W 13.6V 2GHz MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - PD20010-E RF MOSFET Transistors Discrete Semiconductor Products - Transistors - FETs, MOSFETs RF FETs, MOSFETs
Package Type PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) SOT3 PowerSO-10RF (Formed Lead) PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Polarity N-Channel
PD 59000 milliwatts
TJ -65 C (-85 F)
Packing Method Tube; Tube Tube; Tube
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