STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - P90NF03L P90NF03L

Description
Manufacturer: STMicroelectronics Win Source Part Number: 061115-P90NF03L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 47nC @ 5V Max Input Capacitance: 2700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 061115-P90NF03L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 47nC @ 5V Max Input Capacitance: 2700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - P90NF03L - 061115-P90NF03L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P90NF03L
061115-P90NF03L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P90NF03L 061115-P90NF03L
Manufacturer: STMicroelectronics Win Source Part Number: 061115-P90NF03L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 47nC @ 5V Max Input Capacitance: 2700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 061115-P90NF03L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 47nC @ 5V
Max Input Capacitance: 2700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 061115-P90NF03L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - P90NF03L
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 150000 milliwatts
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