STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - P8NM50FP P8NM50FP

Description
Manufacturer: STMicroelectronics Win Source Part Number: 061113-P8NM50FP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 550V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 415pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 061113-P8NM50FP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 550V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 415pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - P8NM50FP - 061113-P8NM50FP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P8NM50FP
061113-P8NM50FP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P8NM50FP 061113-P8NM50FP
Manufacturer: STMicroelectronics Win Source Part Number: 061113-P8NM50FP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 550V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 415pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 061113-P8NM50FP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 550V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 415pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 800 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 061113-P8NM50FP
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - P8NM50FP
Polarity N-Channel; N-Channel
V(BR)DSS 550 volts
PD 25000 milliwatts
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