STMicroelectronics Transistor P50NE10

Description
DISCONTINUED BY MANUFACTURER, TRANSISTOR, TO-220, N-CHANNEL, 180 WATT, 20-100 VAC. FREE 2 YEAR RADWELL WARRANTY
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Description
DISCONTINUED BY MANUFACTURER, TRANSISTOR, TO-220, N-CHANNEL, 180 WATT, 20-100 VAC. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 141101153 - Radwell International
Willingboro, NJ, United States
Transistor
141101153
Transistor 141101153
DISCONTINUED BY MANUFACTURER, TRANSISTOR, TO-220, N-CHANNEL, 180 WATT, 20-100 VAC. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, TRANSISTOR, TO-220, N-CHANNEL, 180 WATT, 20-100 VAC. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P50NE10 - 061007-P50NE10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P50NE10
061007-P50NE10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P50NE10 061007-P50NE10
Manufacturer: STMicroelectronics Win Source Part Number: 061007-P50NE10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 180W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 166nC @ 10V Max Input Capacitance: 6000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 27 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 061007-P50NE10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 180W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 166nC @ 10V
Max Input Capacitance: 6000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Radwell International Win Source Electronics
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 141101153 061007-P50NE10
Product Name Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - P50NE10
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 180000 milliwatts
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