STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - P50NE10 P50NE10

Manufacturer: STMicroelectronics
Win Source Part Number: 061007-P50NE10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 180W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 166nC @ 10V
Max Input Capacitance: 6000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

MOSFET N-CH 100V 50A TO-220 Product overview: P50NE10 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 50A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 50A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-P50NE10 can be used for catalog matching and distributor lookup.