STMicroelectronics Memory NAND512W3A0AV6E

Description
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-WSOP (12x17)
Datasheet
Description
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-WSOP (12x17)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NAND512W3A0AV6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-WSOP (12x17)

FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-WSOP (12x17)

Buy Now Datasheet
IC FLASH 512MBIT PARALLEL 48WSOP

IC FLASH 512MBIT PARALLEL 48WSOP

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND512W3A0AV6E
Integrated Circuits (ICs) - Memory - Memory NAND512W3A0AV6E
IC FLASH 512MBIT PARALLEL 48WSOP

IC FLASH 512MBIT PARALLEL 48WSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number NAND512W3A0AV6E NAND512W3A0AV6E NAND512W3A0AV6E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 50 ns 50 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 736-DP8429D-80 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
3 suppliers
Flash Memory - 1882878P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Memory - MT4C4001J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details