STMicroelectronics, Inc. Memory NAND512R3A2BZA6E

Description
FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 60ns 63-VFBGA (8.5x15)
Request a Quote Datasheet
Description
FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 60ns 63-VFBGA (8.5x15)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NAND512R3A2BZA6E-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 60ns 63-VFBGA (8.5x15)

FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 60ns 63-VFBGA (8.5x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - NAND512R3A2BZA6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND512R3A2BZA6E
Integrated Circuits (ICs) - Memory - Memory NAND512R3A2BZA6E
IC FLASH 512MBIT PAR 63VFBGA

IC FLASH 512MBIT PAR 63VFBGA

Supplier's Site
Memory - NAND512R3A2BZA6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 512Mbit Parallel 60 ns 63-VFBGA (8.5x15)

FLASH - NAND Memory IC 512Mbit Parallel 60 ns 63-VFBGA (8.5x15)

Buy Now Datasheet
IC FLSH 512MBIT PARALLEL 63VFBGA

IC FLSH 512MBIT PARALLEL 63VFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number NAND512R3A2BZA6E-ND NAND512R3A2BZA6E NAND512R3A2BZA6E NAND512R3A2BZA6E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; FLASH Flash; Flash
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 63-VFBGA BGA; 63-VFBGA
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