STMicroelectronics Integrated Circuits (ICs) - Memory - Memory NAND512R3A2AZA6E

Description
IC FLASH 512MBIT PAR 55VFBGA
Datasheet
Description
IC FLASH 512MBIT PAR 55VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND512R3A2AZA6E
Integrated Circuits (ICs) - Memory - Memory NAND512R3A2AZA6E
IC FLASH 512MBIT PAR 55VFBGA

IC FLASH 512MBIT PAR 55VFBGA

Supplier's Site
IC FLSH 512MBIT PARALLEL 55VFBGA

IC FLSH 512MBIT PARALLEL 55VFBGA

Supplier's Site Datasheet
Memory - NAND512R3A2AZA6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 512Mbit Parallel 60 ns 55-VFBGA (8x10)

FLASH - NAND Memory IC 512Mbit Parallel 60 ns 55-VFBGA (8x10)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number NAND512R3A2AZA6E NAND512R3A2AZA6E NAND512R3A2AZA6E
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Cycle Time 60 ns
Density 512000 kbits 512000 kbits 512000 kbits
Supply Voltage Surface Mount 1.7V ~ 1.95V
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