STMicroelectronics Memory NAND512R3A2AZA6E

Description
IC FLSH 512MBIT PARALLEL 55VFBGA
Datasheet
Description
IC FLSH 512MBIT PARALLEL 55VFBGA
Datasheet

Suppliers

Company
Product
Description
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IC FLSH 512MBIT PARALLEL 55VFBGA

IC FLSH 512MBIT PARALLEL 55VFBGA

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND512R3A2AZA6E
Integrated Circuits (ICs) - Memory - Memory NAND512R3A2AZA6E
IC FLASH 512MBIT PAR 55VFBGA

IC FLASH 512MBIT PAR 55VFBGA

Supplier's Site
Memory - NAND512R3A2AZA6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 512Mbit Parallel 60 ns 55-VFBGA (8x10)

FLASH - NAND Memory IC 512Mbit Parallel 60 ns 55-VFBGA (8x10)

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Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number NAND512R3A2AZA6E NAND512R3A2AZA6E NAND512R3A2AZA6E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Access Time 60 ns 60 ns
Density 512000 kbits 512000 kbits 512000 kbits
Cycle Time 60 ns
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