STMicroelectronics Memory NAND512R3A2AZA6E

Description
FLASH - NAND Memory IC 512Mbit Parallel 60 ns 55-VFBGA (8x10)
Datasheet
Description
FLASH - NAND Memory IC 512Mbit Parallel 60 ns 55-VFBGA (8x10)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NAND512R3A2AZA6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 512Mbit Parallel 60 ns 55-VFBGA (8x10)

FLASH - NAND Memory IC 512Mbit Parallel 60 ns 55-VFBGA (8x10)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND512R3A2AZA6E
Integrated Circuits (ICs) - Memory - Memory NAND512R3A2AZA6E
IC FLASH 512MBIT PAR 55VFBGA

IC FLASH 512MBIT PAR 55VFBGA

Supplier's Site
IC FLSH 512MBIT PARALLEL 55VFBGA

IC FLSH 512MBIT PARALLEL 55VFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number NAND512R3A2AZA6E NAND512R3A2AZA6E NAND512R3A2AZA6E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 60 ns 60 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits
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