STMicroelectronics, Inc. Memory NAND01GW3B2AN6E

Description
IC FLASH 1GBIT PARALLEL 48TSOP
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Description
IC FLASH 1GBIT PARALLEL 48TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 1GBIT PARALLEL 48TSOP

IC FLASH 1GBIT PARALLEL 48TSOP

Supplier's Site Datasheet
Memory - 497-4617-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 30ns 48-TSOP

FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 30ns 48-TSOP

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Memory - Flash - NAND01GW3B2AN6E - 145279-NAND01GW3B2AN6E - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - NAND01GW3B2AN6E
145279-NAND01GW3B2AN6E
Memory - Flash - NAND01GW3B2AN6E 145279-NAND01GW3B2AN6E
Manufacturer: STMicroelectronics Win Source Part Number: 145279-NAND01GW3B2AN 6E Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Access Time: 30ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 48-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 145279-NAND01GW3B2AN6E
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Access Time: 30ns
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 48-TSOP
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

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IC FLASH 1GBIT PARALLEL 48TSOP

IC FLASH 1GBIT PARALLEL 48TSOP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - NAND01GW3B2AN6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND01GW3B2AN6E
Integrated Circuits (ICs) - Memory - Memory NAND01GW3B2AN6E
IC FLASH 1GBIT PARALLEL 48TSOP

IC FLASH 1GBIT PARALLEL 48TSOP

Supplier's Site
Memory - NAND01GW3B2AN6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 30 ns 48-TSOP

FLASH - NAND Memory IC 1Gbit Parallel 30 ns 48-TSOP

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Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number NAND01GW3B2AN6E 497-4617-ND 145279-NAND01GW3B2AN6E NAND01GW3B2AN6E NAND01GW3B2AN6E NAND01GW3B2AN6E
Product Name Memory Memory Memory - Flash - NAND01GW3B2AN6E Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH - NAND Flash Flash; FLASH Flash; Flash Flash; Non-Volatile Flash; FLASH
Access Time 30 ns 30 ns 30 ns 30 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits 1000000 kbits
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