128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 Product overview: NAND01GW3B2AN6E from STMicroelectronics is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND01GW3B2AN6E can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 145279-NAND01GW3B2AN
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Access Time: 30ns
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 48-TSOP
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 30ns 48-TSOP
FLASH - NAND Memory IC 1Gbit Parallel 30 ns 48-TSOP
IC FLASH 1GBIT PARALLEL 48TSOP
IC FLASH 1GBIT PARALLEL 48TSOP
IC FLASH 1GBIT PARALLEL 48TSOP
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Quarktwin Technology Ltd. | Lingto Electronic Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-NAND01GW3B2AN6E | 145279-NAND01GW3B2AN6E | 497-4617-ND | NAND01GW3B2AN6E | NAND01GW3B2AN6E | NAND01GW3B2AN6E | NAND01GW3B2AN6E |
| Product Name | 3V Memory IC and Storage Component | Memory - Flash - NAND01GW3B2AN6E | Memory | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Flash; PROM; Non-Volatile, , FLASH, NAND | Flash; FLASH | Flash | Flash; FLASH | Flash; Flash | Flash; FLASH - NAND | Flash; Non-Volatile |
| Access Time | 30 ns | 30 ns | 30 ns | 30 ns | 30 ns | ||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits | ||
| Address Bus Width | 8 bits |
