STMicroelectronics, Inc. Full, Half-Bridge (H Bridge) Drivers MASTERGAN1TR

The MASTERGAN1 is a high power density gate driver designed for half-bridge configurations, integrating two enhancement mode GaN transistors. It operates within a voltage range of 4.75V to 9.5V and is housed in a compact QFN package measuring 9 x 9 x 1 mm. The device features a maximum drain-source breakdown voltage of 600V and an on-resistance (RDS(ON)) of 150 m,Ѷ, with a maximum continuous drain current (IDS(MAX)) of 10A. Key protective features include under-voltage lockout (UVLO) for both high-side and low-side drivers, overtemperature protection, and an interlocking function to prevent cross-conduction. The input pins are compatible with a range of control signals from microcontrollers and DSPs, allowing for flexible interfacing. The MASTERGAN1 is suitable for applications such as switch-mode power supplies, chargers, high-voltage PFC, DC-DC converters, UPS systems, and solar power systems. It operates effectively across an industrial temperature range of -40¬8C to 125¬8C.