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STMicroelectronics Memory M59DR032EA10ZB6

Description

FLASH - NOR Memory IC 32Mbit Parallel 100 ns 48-TFBGA (7x12)

Quarktwin Technology Ltd.
Lingto Electronic Limited

Datasheet

Description

FLASH - NOR Memory IC 32Mbit Parallel 100 ns 48-TFBGA (7x12)

Datasheet

Suppliers

Company

Product

Description

Supplier Links

Memory - M59DR032EA10ZB6 - Quarktwin Technology Ltd.

Quarktwin Technology Ltd.

Shenzhen, Guangdong, China

Memory
M59DR032EA10ZB6

Memory M59DR032EA10ZB6

FLASH - NOR Memory IC 32Mbit Parallel 100 ns 48-TFBGA (7x12)

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Memory - M59DR032EA10ZB6 - Lingto Electronic Limited

Lingto Electronic Limited

Shenzhen, China

Memory
M59DR032EA10ZB6

Memory M59DR032EA10ZB6

IC FLASH 32MBIT PARALLEL 48TFBGA

Supplier's Site

Datasheet

Technical Specifications

	Quarktwin Technology Ltd.	Lingto Electronic Limited
Product Category	Memory Chips	Memory Chips
Product Number	M59DR032EA10ZB6	M59DR032EA10ZB6
Product Name	Memory	Memory
Memory Category	Flash; FLASH	Flash; Flash
Access Time	100 ns	100 ns
Operating Temperature	-40 to 85 C (-40 to 185 F)

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