STMicroelectronics Memory M59DR032EA10ZB6

Description
IC FLASH 32MBIT PARALLEL 48TFBGA
Datasheet
Description
IC FLASH 32MBIT PARALLEL 48TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 32MBIT PARALLEL 48TFBGA

IC FLASH 32MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet
Memory - M59DR032EA10ZB6 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 32Mbit Parallel 100 ns 48-TFBGA (7x12)

FLASH - NOR Memory IC 32Mbit Parallel 100 ns 48-TFBGA (7x12)

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number M59DR032EA10ZB6 M59DR032EA10ZB6
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 100 ns 100 ns
Density 32000 kbits 32000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ626162 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Access Time 12 ns
Operating Temperature -65 to 150 C (-85 to 302 F)
View Details
Memory - S25FL116K0XWEN009 - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Operating Temperature -40 to 125 C (-40 to 257 F)
Density 16000 kbits
View Details
2 suppliers
Memory - CAT28F001H-90T - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Access Time 90 ns
Density 1000 kbits
View Details