STMicroelectronics Memory M59DR032EA10ZB6

Description
IC FLASH 32MBIT PARALLEL 48TFBGA
  • Memory - M59DR032EA10ZB6 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - M59DR032EA10ZB6 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC FLASH 32MBIT PARALLEL 48TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M59DR032EA10ZB6 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
M59DR032EA10ZB6
Memory M59DR032EA10ZB6
IC FLASH 32MBIT PARALLEL 48TFBGA

IC FLASH 32MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet
Memory - M59DR032EA10ZB6 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
M59DR032EA10ZB6
Memory M59DR032EA10ZB6
FLASH - NOR Memory IC 32Mbit Parallel 100 ns 48-TFBGA (7x12)

FLASH - NOR Memory IC 32Mbit Parallel 100 ns 48-TFBGA (7x12)

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Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number M59DR032EA10ZB6 M59DR032EA10ZB6
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 100 ns 100 ns
Density 32000 kbits 32000 kbits
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