STMicroelectronics, Inc. Memory M58LW064D110N6

The M58LW064D110N6 is a 64 Mbit (8Mb x8, 4Mb x16) Flash memory device from Quarktwin Technology Ltd., designed for use in various applications requiring non-volatile storage. It operates with a supply voltage range of 2.7 to 3.6V for programming, erasing, and reading operations. The device features a random read access time of 110 ns and supports page mode read with access times of 110 ns for the first word and 25 ns for subsequent words. This memory chip includes 64 uniform memory blocks of 64 KWords each, allowing for efficient data management and organization. It supports a programming time of 12 µs per word and offers a high endurance of 100,000 program/erase cycles per block. Enhanced security features include block protection/unprotection capabilities and a 128-bit protection register with a unique 64-bit code in the one-time programmable area. The M58LW064D110N6 is available in lead-free packaging options, compliant with lead-free soldering processes, and comes in two package types: TSOP56 (14 x 20 mm) and TBGA64 (10 x 13 mm). This device is suitable for applications that require reliable and fast flash memory solutions.