STMicroelectronics, Inc. Memory M58LW064D110N6

Description
FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 110ns 56-TSOP
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Description
FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 110ns 56-TSOP
Request a Quote
Datasheet
Datasheet Summary
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The M58LW064D110N6 is a 64 Mbit (8Mb x8, 4Mb x16) Flash memory device from Quarktwin Technology Ltd., designed for use in various applications requiring non-volatile storage. It operates with a supply voltage range of 2.7 to 3.6V for programming, erasing, and reading operations. The device features a random read access time of 110 ns and supports page mode read with access times of 110 ns for the first word and 25 ns for subsequent words. This memory chip includes 64 uniform memory blocks of 64 KWords each, allowing for efficient data management and organization. It supports a programming time of 12 µs per word and offers a high endurance of 100,000 program/erase cycles per block. Enhanced security features include block protection/unprotection capabilities and a 128-bit protection register with a unique 64-bit code in the one-time programmable area. The M58LW064D110N6 is available in lead-free packaging options, compliant with lead-free soldering processes, and comes in two package types: TSOP56 (14 x 20 mm) and TBGA64 (10 x 13 mm). This device is suitable for applications that require reliable and fast flash memory solutions.

Datasheet Summary
Powered by GS/AI

The M58LW064D110N6 is a 64 Mbit (8Mb x8, 4Mb x16) Flash memory device from Quarktwin Technology Ltd., designed for use in various applications requiring non-volatile storage. It operates with a supply voltage range of 2.7 to 3.6V for programming, erasing, and reading operations. The device features a random read access time of 110 ns and supports page mode read with access times of 110 ns for the first word and 25 ns for subsequent words. This memory chip includes 64 uniform memory blocks of 64 KWords each, allowing for efficient data management and organization. It supports a programming time of 12 µs per word and offers a high endurance of 100,000 program/erase cycles per block. Enhanced security features include block protection/unprotection capabilities and a 128-bit protection register with a unique 64-bit code in the one-time programmable area. The M58LW064D110N6 is available in lead-free packaging options, compliant with lead-free soldering processes, and comes in two package types: TSOP56 (14 x 20 mm) and TBGA64 (10 x 13 mm). This device is suitable for applications that require reliable and fast flash memory solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - 497-1727-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 110ns 56-TSOP

FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 110ns 56-TSOP

Buy Now Datasheet
Memory IC and Storage Component - 774-M58LW064D110N6 - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-M58LW064D110N6
Memory IC and Storage Component 774-M58LW064D110N6
IC FLASH 64MBIT PARALLEL 56TSOP Product overview: M58LW064D110N6 from STMicroelectronics is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-M58LW064D110N6 can be used for catalog matching and distributor lookup.

IC FLASH 64MBIT PARALLEL 56TSOP Product overview: M58LW064D110N6 from STMicroelectronics is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-M58LW064D110N6 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - Flash - M58LW064D110N6 - 020956-M58LW064D110N6 - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - M58LW064D110N6
020956-M58LW064D110N6
Memory - Flash - M58LW064D110N6 020956-M58LW064D110N6
Manufacturer: STMicroelectronics Win Source Part Number: 020956-M58LW064D110N 6 Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Access Time: 110ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 56-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH

Manufacturer: STMicroelectronics
Win Source Part Number: 020956-M58LW064D110N6
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Access Time: 110ns
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 56-TSOP
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH

Buy Now Datasheet
Memory - M58LW064D110N6 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 64Mbit Parallel 110 ns 56-TSOP

Buy Now Datasheet
IC FLASH 64MBIT PARALLEL 56TSOP

IC FLASH 64MBIT PARALLEL 56TSOP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - M58LW064D110N6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M58LW064D110N6
Integrated Circuits (ICs) - Memory - Memory M58LW064D110N6
IC FLASH 64MBIT PARALLEL 56TSOP

IC FLASH 64MBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 497-1727-ND 774-M58LW064D110N6 020956-M58LW064D110N6 M58LW064D110N6 M58LW064D110N6 M58LW064D110N6
Product Name Memory Memory IC and Storage Component Memory - Flash - M58LW064D110N6 Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash Flash; Non-Volatile Flash; FLASH Flash; FLASH Flash; Flash Flash; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits 64000 kbits
Package Type "56-TFSOP (0.724"", 18.40mm Width)" Tube SOP; 56-TSOP 56-TFSOP (0.724\", 18.40mm Width)
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