STMicroelectronics, Inc. Memory - Flash - M58LW064D110N6 M58LW064D110N6

Description
Manufacturer: STMicroelectronics Win Source Part Number: 020956-M58LW064D110N 6 Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Access Time: 110ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 56-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH
Request a Quote
Description
Manufacturer: STMicroelectronics Win Source Part Number: 020956-M58LW064D110N 6 Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Access Time: 110ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 56-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The M58LW064D110N6 is a 64 Mbit (8Mb x8, 4Mb x16) Flash memory device from Quarktwin Technology Ltd., designed for use in various applications requiring non-volatile storage. It operates with a supply voltage range of 2.7 to 3.6V for programming, erasing, and reading operations. The device features a random read access time of 110 ns and supports page mode read with access times of 110 ns for the first word and 25 ns for subsequent words. This memory chip includes 64 uniform memory blocks of 64 KWords each, allowing for efficient data management and organization. It supports a programming time of 12 µs per word and offers a high endurance of 100,000 program/erase cycles per block. Enhanced security features include block protection/unprotection capabilities and a 128-bit protection register with a unique 64-bit code in the one-time programmable area. The M58LW064D110N6 is available in lead-free packaging options, compliant with lead-free soldering processes, and comes in two package types: TSOP56 (14 x 20 mm) and TBGA64 (10 x 13 mm). This device is suitable for applications that require reliable and fast flash memory solutions.

Datasheet Summary
Powered by GS/AI

The M58LW064D110N6 is a 64 Mbit (8Mb x8, 4Mb x16) Flash memory device from Quarktwin Technology Ltd., designed for use in various applications requiring non-volatile storage. It operates with a supply voltage range of 2.7 to 3.6V for programming, erasing, and reading operations. The device features a random read access time of 110 ns and supports page mode read with access times of 110 ns for the first word and 25 ns for subsequent words. This memory chip includes 64 uniform memory blocks of 64 KWords each, allowing for efficient data management and organization. It supports a programming time of 12 µs per word and offers a high endurance of 100,000 program/erase cycles per block. Enhanced security features include block protection/unprotection capabilities and a 128-bit protection register with a unique 64-bit code in the one-time programmable area. The M58LW064D110N6 is available in lead-free packaging options, compliant with lead-free soldering processes, and comes in two package types: TSOP56 (14 x 20 mm) and TBGA64 (10 x 13 mm). This device is suitable for applications that require reliable and fast flash memory solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - M58LW064D110N6 - 020956-M58LW064D110N6 - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - M58LW064D110N6
020956-M58LW064D110N6
Memory - Flash - M58LW064D110N6 020956-M58LW064D110N6
Manufacturer: STMicroelectronics Win Source Part Number: 020956-M58LW064D110N 6 Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Access Time: 110ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 56-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH

Manufacturer: STMicroelectronics
Win Source Part Number: 020956-M58LW064D110N6
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Access Time: 110ns
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 56-TSOP
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH

Buy Now Datasheet
Memory IC and Storage Component - 774-M58LW064D110N6 - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-M58LW064D110N6
Memory IC and Storage Component 774-M58LW064D110N6
IC FLASH 64MBIT PARALLEL 56TSOP Product overview: M58LW064D110N6 from STMicroelectronics is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-M58LW064D110N6 can be used for catalog matching and distributor lookup.

IC FLASH 64MBIT PARALLEL 56TSOP Product overview: M58LW064D110N6 from STMicroelectronics is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-M58LW064D110N6 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - 497-1727-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 110ns 56-TSOP

FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 110ns 56-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - M58LW064D110N6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M58LW064D110N6
Integrated Circuits (ICs) - Memory - Memory M58LW064D110N6
IC FLASH 64MBIT PARALLEL 56TSOP

IC FLASH 64MBIT PARALLEL 56TSOP

Supplier's Site
Memory - M58LW064D110N6 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 64Mbit Parallel 110 ns 56-TSOP

Buy Now Datasheet
IC FLASH 64MBIT PARALLEL 56TSOP

IC FLASH 64MBIT PARALLEL 56TSOP

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 020956-M58LW064D110N6 774-M58LW064D110N6 497-1727-ND M58LW064D110N6 M58LW064D110N6 M58LW064D110N6
Product Name Memory - Flash - M58LW064D110N6 Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash Flash; Non-Volatile Flash; FLASH Flash; Flash
Access Time 110 ns 110 ns 110 ns 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type SOP; 56-TSOP Tube "56-TFSOP (0.724"", 18.40mm Width)" 56-TFSOP (0.724\", 18.40mm Width)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882727P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 2048000 kbits
Package Type WSON
View Details
Memory - AS5LC1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 6116SA25SOGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 16 kbits
View Details
Memory - MM54C200D/883 - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category RAM
Access Time 520 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers