STMicroelectronics, Inc. Bipolar Transistor Arrays L6221AD013TR

Description
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 50V 1.8A 1W Surface Mount 20-SO
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 50V 1.8A 1W Surface Mount 20-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - 497-4004-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
497-4004-2-ND
Bipolar Transistor Arrays 497-4004-2-ND
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 50V 1.8A 1W Surface Mount 20-SO

Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 50V 1.8A 1W Surface Mount 20-SO

Buy Now Datasheet
Bipolar Transistor Arrays - L6221AD013TR - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
L6221AD013TR
Bipolar Transistor Arrays L6221AD013TR
TRANS 4NPN DARL 50V 1.8A 20SOIC

TRANS 4NPN DARL 50V 1.8A 20SOIC

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - L6221AD013TR - 127040-L6221AD013TR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - L6221AD013TR
127040-L6221AD013TR
TRANSISTORS - Transistors (BJT) - Arrays - L6221AD013TR 127040-L6221AD013TR
Manufacturer: STMicroelectronics Win Source Part Number: 127040-L6221AD013TR Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 4 NPN Darlington (Quad) Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: 20-SO Maximum Current Collector: 1.8A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.6V @ 1.8A Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 127040-L6221AD013TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 4 NPN Darlington (Quad)
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: 20-SO
Maximum Current Collector: 1.8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 1.6V @ 1.8A
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - L6221AD013TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
L6221AD013TR
Discrete Semiconductor Products - Transistors - Bipolar (BJT) L6221AD013TR
TRANS 4NPN DARL 50V 1.8A 20SOIC

TRANS 4NPN DARL 50V 1.8A 20SOIC

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 497-4004-2-ND L6221AD013TR 127040-L6221AD013TR L6221AD013TR
Product Name Bipolar Transistor Arrays Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - L6221AD013TR Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN 4 NPN Darlington (Quad); NPN NPN; 4 NPN Darlington (Quad)
Package Type "20-SOIC (0.295"", 7.50mm Width)" 20-SOIC (0.295", 7.50mm Width) SOT3; 20-SO
IC(max) 1800 milliamps 1800 milliamps
VCEO 50 volts 50 volts
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