STMicroelectronics, Inc. Bipolar Transistor Arrays L603C

Description
TRANS 8NPN DARL 90V 0.4A 18DIP
Request a Quote Datasheet
Description
TRANS 8NPN DARL 90V 0.4A 18DIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - L603C - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
L603C
Bipolar Transistor Arrays L603C
TRANS 8NPN DARL 90V 0.4A 18DIP

TRANS 8NPN DARL 90V 0.4A 18DIP

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - L603C - 1051270-L603C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - L603C
1051270-L603C
TRANSISTORS - Transistors (BJT) - Arrays - L603C 1051270-L603C
Manufacturer: STMicroelectronics Win Source Part Number: 1051270-L603C Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: 8 NPN Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -25°C to 150°C (TJ) Case / Package: 18-DIP Maximum Current Collector: 400mA VCEO Maximum Collector-Emitter Breakdown Voltage: 90V Max Vce (sat): 2V @ 500μA, 300mA Maximum Power Dissipation: 1.8W Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1051270-L603C
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: 8 NPN Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -25°C to 150°C (TJ)
Case / Package: 18-DIP
Maximum Current Collector: 400mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 90V
Max Vce (sat): 2V @ 500μA, 300mA
Maximum Power Dissipation: 1.8W
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistor - 16451744 - Radwell International
Willingboro, NJ, United States
Transistor
16451744
Transistor 16451744
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 0.4A I(C), 90V V(BR)CEO, 8-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, DIP-18. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 0.4A I(C), 90V V(BR)CEO, 8-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, DIP-18. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Bipolar Transistor Arrays - 497-3639-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
497-3639-ND
Bipolar Transistor Arrays 497-3639-ND
Bipolar (BJT) Transistor Array 8 NPN Darlington 90V 400mA 1.8W Through Hole 18-DIP

Bipolar (BJT) Transistor Array 8 NPN Darlington 90V 400mA 1.8W Through Hole 18-DIP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - L603C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
L603C
Discrete Semiconductor Products - Transistors - Bipolar (BJT) L603C
TRANS 8NPN DARL 90V 0.4A 18DIP

TRANS 8NPN DARL 90V 0.4A 18DIP

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Radwell International DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors RF Transistors Transistors Bipolar RF Transistors
Product Number L603C 1051270-L603C 16451744 497-3639-ND L603C
Product Name Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - L603C Transistor Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity 8 NPN Darlington; NPN NPN; 8 NPN Darlington NPN
Package Type 18-DIP SOT3; 18-DIP
IC(max) 400 milliamps 400 milliamps
VCEO 90 volts 90 volts
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