Manufacturer: STMicroelectronics
Win Source Part Number: 811241-IRF820
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500V
Part Status: Obsolete (End Of Life)
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 80W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 3Ohm at 1.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 315pF at 25V
Current - Continuous Drain (Id) at 25°C: 4A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: IRF8
Maximum Vgs: ±30V
N-Channel 500V 4A (Tc) 80W (Tc) Through Hole TO-220
MOSFET N-CH 500V 4A TO220AB
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 811241-IRF820 | 497-2733-5-ND | IRF820 |
| Product Name | FETs - Single - IRF820 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | |
| MOSFET Operating Mode | Enhancement | ||
| PD | 80000 milliwatts |
