STMicroelectronics, Inc. Single FETs, MOSFETs IRF640FP

Description
N-Channel 200V 18A (Tc) 40W (Tc) Through Hole TO-220FP
Request a Quote Datasheet
Description
N-Channel 200V 18A (Tc) 40W (Tc) Through Hole TO-220FP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF640FP-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF640FP-ND
Single FETs, MOSFETs IRF640FP-ND
N-Channel 200V 18A (Tc) 40W (Tc) Through Hole TO-220FP

N-Channel 200V 18A (Tc) 40W (Tc) Through Hole TO-220FP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640FP - 1046540-IRF640FP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640FP
1046540-IRF640FP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640FP 1046540-IRF640FP
Manufacturer: STMicroelectronics Win Source Part Number: 1046540-IRF640FP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 72nC @ 10V Max Input Capacitance: 1560pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1046540-IRF640FP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 72nC @ 10V
Max Input Capacitance: 1560pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF640FP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF640FP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF640FP
MOSFET N-CH 200V 18A TO220FP

MOSFET N-CH 200V 18A TO220FP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF640FP-ND 1046540-IRF640FP IRF640FP
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640FP Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220FP TO-220; TO-220-3 Full Pack
V(BR)DSS 200 volts
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