STMicroelectronics, Inc. Single FETs, MOSFETs IRF630FP

N-Channel 200V 9A (Tc) 30W (Tc) Through Hole TO-220FP

9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN Product overview: IRF630FP from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 9A, 200V, 0.4ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 9A, 200V, 0.4ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF630FP can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 037844-IRF630FP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 400 mOhm @ 4.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management