STMicroelectronics, Inc. MOSFETs IRF630

Description
MOSFET N-Channel 200V 9A TO220
Request a Quote Datasheet
Description
MOSFET N-Channel 200V 9A TO220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 4860171 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
4860171
MOSFETs 4860171
MOSFET N-Channel 200V 9A TO220

MOSFET N-Channel 200V 9A TO220

Supplier's Site
Single FETs, MOSFETs - IRF630 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF630
Single FETs, MOSFETs IRF630
MOSFET N-CH 200V 9A TO220AB

MOSFET N-CH 200V 9A TO220AB

Supplier's Site Datasheet
Singapore
200V 9A TO-220 MOSFET Transistor
278-IRF630
200V 9A TO-220 MOSFET Transistor 278-IRF630
N-Ch MOSFET, 200V Vdss, 9A Id, 400mR Rds(on), TO-220 Product overview: IRF630 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF630 can be used for catalog matching and distributor lookup.

N-Ch MOSFET, 200V Vdss, 9A Id, 400mR Rds(on), TO-220 Product overview: IRF630 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF630 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF630 - 017449-IRF630 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF630
017449-IRF630
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF630 017449-IRF630
Manufacturer: STMicroelectronics Win Source Part Number: 017449-IRF630 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 400 mOhm @ 4.5A, 10V Alternative Parts (Cross-Reference): IRL630A; SiHF630; SiHF630-E3; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 017449-IRF630
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 400 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): IRL630A; SiHF630; SiHF630-E3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-2757-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-2757-5-ND
Single FETs, MOSFETs 497-2757-5-ND
N-Channel 200V 9A (Tc) 75W (Tc) Through Hole TO-220

N-Channel 200V 9A (Tc) 75W (Tc) Through Hole TO-220

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRF630
Triode/MOS Tube/Transistor >> MOSFETs IRF630
200V 9A 75W 400mΩ@10V,4.5A 4V@250uA N Channel TO-220 MOSFETs ROHS

200V 9A 75W 400mΩ@10V,4.5A 4V@250uA N Channel TO-220 MOSFETs ROHS

Supplier's Site Datasheet
N Channel Mosfet, 200V, 9A, To-220; Channel Type Stmicroelectronics - 89K1268 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 200V, 9A, To-220; Channel Type Stmicroelectronics
89K1268
N Channel Mosfet, 200V, 9A, To-220; Channel Type Stmicroelectronics 89K1268
N CHANNEL MOSFET, 200V, 9A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 200V, 9A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

Supplier's Site
Transistor - 16451590 - Radwell International
Willingboro, NJ, United States
Transistor
16451590
Transistor 16451590
POWER MOSFET, N-CHANNEL, THROUGH-HOLE MOUNT, CASE: TO-220, CONTINUOUS DRAIN CURRENT: 9 A, DRAIN SOURCE VOLTAGE: 200 V, DRAIN SOURCE ON STATE RESSITANCE: 0.4 OHMS, TEST VOLTAGE: 10 V, GATE SOURCE THRESHOLD VOLTAGE: 3 V, POWER DISSIPATION: 100 W, 3-PIN. FREE 2 YEAR RADWELL WARRANTY

POWER MOSFET, N-CHANNEL, THROUGH-HOLE MOUNT, CASE: TO-220, CONTINUOUS DRAIN CURRENT: 9 A, DRAIN SOURCE VOLTAGE: 200 V, DRAIN SOURCE ON STATE RESSITANCE: 0.4 OHMS, TEST VOLTAGE: 10 V, GATE SOURCE THRESHOLD VOLTAGE: 3 V, POWER DISSIPATION: 100 W, 3-PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF630 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF630
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF630
MOSFET N-CH 200V 9A TO220AB

MOSFET N-CH 200V 9A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
IRF630
MOSFET IRF630
MOSFET N-Ch 200 Volt 10 Amp

MOSFET N-Ch 200 Volt 10 Amp

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.35Ohm;ID 9A;TO-220;PD 75W;VGS +/-20V;gFS - 70013656 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.35Ohm;ID 9A;TO-220;PD 75W;VGS +/-20V;gFS
70013656
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.35Ohm;ID 9A;TO-220;PD 75W;VGS +/-20V;gFS 70013656
N-Channel Mesh Overlay™ MOSFET, TO-220 Package, 75 W, -65 to +150°C Extremely high dv⁄dt capability Very low intrinsic capacitances Gate charge minimized Designed using the companies consolidated strip layout-based mesh overlay™ process. This technology matches and improves the performances compared with standard parts from various sources.

N-Channel Mesh Overlay™ MOSFET, TO-220 Package, 75 W, -65 to +150°C

  • Extremely high dv⁄dt capability
  • Very low intrinsic capacitances
  • Gate charge minimized
    Designed using the companies consolidated strip layout-based mesh overlay™ process. This technology matches and improves the performances compared with standard parts from various sources.
Supplier's Site

Technical Specifications

  RS Components, Ltd. ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey LCSC Electronics Technology (HK) Limited Newark, An Avnet Company Radwell International Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 4860171 IRF630 278-IRF630 017449-IRF630 497-2757-5-ND IRF630 89K1268 16451590 IRF630 IRF630 70013656
Product Name MOSFETs Single FETs, MOSFETs 200V 9A TO-220 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF630 Single FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs N Channel Mosfet, 200V, 9A, To-220; Channel Type Stmicroelectronics Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.35Ohm;ID 9A;TO-220;PD 75W;VGS +/-20V;gFS
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
MOSFET Operating Mode Enhancement
Package Type TO-220; To-220 TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220 TO-3; TO-220 TO-220; TO-220-3 TO-220
Number of units in IC 1
Transistor Technology / Material MOSFET (Metal Oxide)
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2 suppliers