STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - F8NK100Z F8NK100Z

Manufacturer: STMicroelectronics
Win Source Part Number: 066706-F8NK100Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 6.5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 102nC @ 10V
Max Input Capacitance: 2180pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.85 Ohm @ 3.15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

MOSFET N-CH 1000V 6.5A TO220FP Product overview: F8NK100Z from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 6.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 6.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-F8NK100Z can be used for catalog matching and distributor lookup.