STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - F6NM60N F6NM60N

Manufacturer: STMicroelectronics
Win Source Part Number: 066705-F6NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 420pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 920 mOhm @ 2.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

MOSFET N-CH 600V 4.6A TO-220FP Product overview: F6NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4.6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-F6NM60N can be used for catalog matching and distributor lookup.