STMicroelectronics, Inc. Single FETs, MOSFETs BUZ10

Description
N-Channel 50V 23A (Tc) 75W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 50V 23A (Tc) 75W (Tc) Through Hole TO-220
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - 497-2728-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-2728-5-ND
Single FETs, MOSFETs 497-2728-5-ND
N-Channel 50V 23A (Tc) 75W (Tc) Through Hole TO-220

N-Channel 50V 23A (Tc) 75W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ10 - 201660-BUZ10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ10
201660-BUZ10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ10 201660-BUZ10
Manufacturer: STMicroelectronics Win Source Part Number: 201660-BUZ10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Input Capacitance: 900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 70 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 201660-BUZ10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Input Capacitance: 900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 70 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUZ10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUZ10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUZ10
MOSFET N-CH 50V 23A TO220AB

MOSFET N-CH 50V 23A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-2728-5-ND 201660-BUZ10 BUZ10
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUZ10 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 50 volts
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