STMicroelectronics, Inc. Single Bipolar Transistors BULB128-1

Description
Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-262
  • Single Bipolar Transistors - 497-12150-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - BULB128-1 - 039753-BULB128-1 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BULB128-1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-262
Request a Quote Datasheet

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Product
Description
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Single Bipolar Transistors - 497-12150-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
497-12150-ND
Single Bipolar Transistors 497-12150-ND
Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-262

Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-262

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BULB128-1 - 039753-BULB128-1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BULB128-1
039753-BULB128-1
TRANSISTORS - Transistors (BJT) - Single - BULB128-1 039753-BULB128-1
Manufacturer: STMicroelectronics Win Source Part Number: 039753-BULB128-1 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-262 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 400V Max Vce (sat): 500mV @ 1A, 4A Collector Cut-off Current(Max): 250μA Typical Gain (hFE) (Min): 14 @ 2A, 5V Maximum Power Dissipation: 70W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 039753-BULB128-1
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-262
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Max Vce (sat): 500mV @ 1A, 4A
Collector Cut-off Current(Max): 250μA
Typical Gain (hFE) (Min): 14 @ 2A, 5V
Maximum Power Dissipation: 70W
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BULB128-1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BULB128-1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BULB128-1
TRANS NPN 400V 4A TO262

TRANS NPN 400V 4A TO262

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 497-12150-ND 039753-BULB128-1 BULB128-1
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BULB128-1 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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